Thermal Characterisation of Hybrid, Flip-Chip InP-Si DFB Lasers.

WA detailed thermal analysis of a hybrid, flip-chip InP-Si DFB laser is presented in this work. The lasers were experimentally tested at different operating temperatures, which allowed for deriving their thermal performance characteristics: the temperature dependence of threshold current, lasing slope, and output spectrum. Using these data, the laser thermal resistance was calculated ( = 75.

3ω correction method for eliminating resistance measurement error due to Joule heating.

Electrical four-terminal sensing at (sub-)micrometer scales enables the characterization of key electromagnetic properties within the semiconductor industry, including materials' resistivity, Hall mobility/carrier density, and magnetoresistance. However, as devices' critical dimensions continue to shrink, significant over/underestimation of properties due to a by-product Joule heating of the probed volume becomes increasingly common. Here, we demonstrate how self-heating effects can be quantified and compensated for via 3ω signals to yield zero-current transfer resistance.