Charge Transfer in c-Si(n)/TiO(ALD) at the Amorphous/Anatase Transition: A Transient Surface Photovoltage Spectroscopy Study.

Electronic properties and charge transfer processes were studied in an n-Si(n)/TiO(ALD) system at an amorphous TiO/anatase transition by transient surface photovoltage spectroscopy at constant photon flux. The TiO layers were deposited by atomic layer deposition (ALD) onto highly doped silicon (c-Si(n)), and the phase composition of the TiO layers changed with increasing thickness from amorphous to the anatase polymorph as anatase crystallites started to grow at the surface. Depending on phase composition, the band gap of TiO correlated with the characteristic energy of exponential tails.