Size-Dependent Electroluminescence and Current-Voltage Measurements of Blue InGaN/GaN µLEDs down to the Submicron Scale.

Besides high-power light-emitting diodes (LEDs) with dimensions in the range of mm, micro-LEDs (μLEDs) are increasingly gaining interest today, motivated by the future applications of μLEDs in augmented reality displays or for nanometrology and sensor technology. A key aspect of this miniaturization is the influence of the structure size on the electrical and optical properties of μLEDs. Thus, in this article, investigations of the size dependence of the electro-optical properties of μLEDs, with diameters in the range of 20 to 0.

Direct imaging of Indium-rich triangular nanoprisms self-organized formed at the edges of InGaN/GaN core-shell nanorods.

Higher indium incorporation in self-organized triangular nanoprisms at the edges of InGaN/GaN core-shell nanorods is directly evidenced by spectral cathodoluminescence microscopy in a scanning transmission electron microscope. The nanoprisms are terminated by three 46 nm wide a-plane nanofacets with sharp interfaces forming a well-defined equilateral triangular base in the basal plane. Redshifted InGaN luminescence and brighter Z-contrast are resolved for these structures compared to the InGaN layers on the nanorod sidewalls, which is attributed to at least 4 % higher indium content.

Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core-shell (In,Ga)N/GaN rod light-emitting diodes.

Employing nanofocus x-ray diffraction, we investigate the local strain field induced by a five-fold (In,Ga)N multi-quantum well embedded into a GaN micro-rod in core-shell geometry. Due to an x-ray beam width of only 150 nm in diameter, we are able to distinguish between individual m-facets and to detect a significant in-plane strain gradient along the rod height. This gradient translates to a red-shift in the emitted wavelength revealed by spatially resolved cathodoluminescence measurements.

Band engineered epitaxial 3D GaN-InGaN core-shell rod arrays as an advanced photoanode for visible-light-driven water splitting.

3D single-crystalline, well-aligned GaN-InGaN rod arrays are fabricated by selective area growth (SAG) metal-organic vapor phase epitaxy (MOVPE) for visible-light water splitting. Epitaxial InGaN layer grows successfully on 3D GaN rods to minimize defects within the GaN-InGaN heterojunctions. The indium concentration (In ∼ 0.

Gallium nitride heterostructures on 3D structured silicon.

We investigated GaN-based heterostructures grown on three-dimensionally patterned Si(111) substrates by metal organic vapour phase epitaxy, with the goal of fabricating well controlled high quality, defect reduced GaN-based nanoLEDs. The high aspect ratios of such pillars minimize the influence of the lattice mismatched substrate and improve the material quality. In contrast to other approaches, we employed deep etched silicon substrates to achieve a controlled pillar growth.