High Performance Field-Effect Transistors Based on Partially Suspended 2D Materials via Block Copolymer Lithography.

Although various two-dimensional (2D) materials hold great promise in next generation electronic devices, there are many challenges to overcome to be used in practical applications. One of them is the substrate effect, which directly affects the device performance. The large interfacial area and interaction between 2D materials and substrate significantly deteriorate the device performance.

Neutral-layer-free directed self-assembly of block copolymer in trench using capillary force-induced meniscus.

We propose trench-directed self-assembly (TDSA) of a block copolymer (BCP) driven by a capillary force-induced meniscus as a facile scalable nanolithography method. Unlike conventional directed self-assembly methods, TDSA enables the achievement of neutral surface-free vertical orientations of the BCP nanopatterns irrespective of the polarizability of the substrate, which may be, for example, a ceramic (SiO) on Semiconductor (Si). In our demonstration of the proposed method, we generated various morphologies of the BCP nanopatterns by varying the trench width, and molecular weight of the BCP.