Is BaInOa high-superconductor?

It has been suggested that BaInOmight be a high-superconductor. Experimental investigation of the properties of BaInOwas long inhibited by its instability in air. Recently epitaxial BaInOwith a protective capping layer was demonstrated, which finally allows its electronic characterization.

Local inhomogeneities resolved by scanning probe techniques and their impact on local 2DEG formation in oxide heterostructures.

Lateral inhomogeneities in the formation of two-dimensional electron gases (2DEG) directly influence their electronic properties. Understanding their origin is an important factor for fundamental interpretations, as well as high quality devices. Here, we studied the local formation of the buried 2DEG at LaAlO/SrTiO (LAO/STO) interfaces grown on STO (100) single crystals with partial TiO termination, utilizing conductive atomic force microscopy (c-AFM) and scattering-type scanning near-field optical microscopy (s-SNOM).

In-Gap States and Band-Like Transport in Memristive Devices.

Point defects such as oxygen vacancies cause emergent phenomena such as resistive switching in transition-metal oxides, but their influence on the electron-transport properties is far from being understood. Here, we employ direct mapping of the electronic structure of a memristive device by spectromicroscopy. We find that oxygen vacancies result in in-gap states that we use as input for single-band transport simulations.

UV radiation enhanced oxygen vacancy formation caused by the PLD plasma plume.

Pulsed Laser Deposition is a commonly used non-equilibrium physical deposition technique for the growth of complex oxide thin films. A wide range of parameters is known to influence the properties of the used samples and thin films, especially the oxygen-vacancy concentration. One parameter has up to this point been neglected due to the challenges of separating its influence from the influence of the impinging species during growth: the UV-radiation of the plasma plume.

Unraveling the enhanced Oxygen Vacancy Formation in Complex Oxides during Annealing and Growth.

The reduction of oxides during annealing and growth in low pressure processes is a widely known problem. We hence investigate the influence of mere annealing and of growth in vacuum systems to shed light on the reasons behind the reduction of perovskites. When comparing the existing literature regarding the reduction of the perovskite model material SrTiO it is conspicuous that one finds different oxygen pressures required to achieve reduction for vacuum annealing and for chemically controlled reducing atmospheres.