Publications by authors named "Henning GroSSekappenberg"

To investigate the degree of conversion (DC), Martens hardness (HM), elastic indentation modulus (E), and flexural strength (FS) of veneering resin composites (SR Nexco Paste (NP), Ceramage Incisal (CI), Gradia Plus (GP); n=60/group) cured with different polymerization devices (bre.Lux Power Unit, Labolight DUO, Otoflash G171, LC-3DPrint Box, PCU LED; n=12/subgroup) after storage. Otoflash G171 and Labolight DUO showed increased DC/HM/E.

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Silylium ions undergo a single-electron reduction with phosphanes, leading to transient silyl radicals and the corresponding stable phosphoniumyl radical cations. As supported by DFT calculations, phosphanes with electron-rich 2,6-disubstituted aryl groups are sufficiently strong reductants to facilitate this single-electron transfer (SET). Frustration as found in kinetically stabilized triarylsilylium ion/phosphane Lewis pairs is not essential, and silylphosphonium ions, which are generated by conventional Lewis adduct formation of solvent-stabilized trialkylsilylium ions and phosphanes, engage in the same radical mechanism.

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The synthesis of two series of silylated chalconium borates, 9 and 10, which are based on the peri-naphthyl and peri-acenaphthyl framework, is reported (chalcogen (Ch): O, S, Se, Te). NMR investigations of the selenium- and tellurium-containing precursor silanes 3 d-f and 8 d, f revealed a significant through-space J-coupling between the chalcogen nuclei and the Me SiH group. Experimental and computational results typify the synthesized cations 9 and 10 as chalconium ions.

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