Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology.

This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are significant improvements over previous reports.

High-resolution MEMS inertial sensor combining large-displacement buckling behaviour with integrated capacitive readout.

Commercially available gravimeters and seismometers can be used for measuring Earth's acceleration at resolution levels in the order of (where g represents earth's gravity) but they are typically high-cost and bulky. In this work the design of a bulk micromachined MEMS device exploiting non-linear buckling behaviour is described, aiming for resolution by maximising mechanical and capacitive sensitivity. High mechanical sensitivity is obtained through low structural stiffness.