Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition.

HfO and FeO thin films and laminated stacks were grown by atomic layer deposition at 350 °C from hafnium tetrachloride, ferrocene, and ozone. Nonlinear, saturating, and hysteretic magnetization was recorded in the films. Magnetization was expectedly dominated by increasing the content of FeO.

Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition.

Crystal structure and electrical properties of hafnium-praseodymium oxide thin films grown by atomic layer deposition on ruthenium substrate electrodes were characterized and compared with those of undoped HfO films. The HfO reference films crystallized in the stable monoclinic phase of HfO. Mixing HfO and PrO resulted in the growth of nanocrystalline metastable tetragonal HfO.

Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone.

Atomic layer deposition method was used to grow thin films consisting of ZrOand MnOlayers. Magnetic and electric properties were studied of films deposited at 300 °C. Some deposition characteristics of the manganese(III)acetylacetonate and ozone process were investigated, such as the dependence of growth rate on the deposition temperature and film crystallinity.

Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane.

Amorphous SiO-NbO nanolaminates and mixture films were grown by atomic layer deposition. The films were grown at 300 °C from Nb(OCH), Si(NHCH), and O to thicknesses ranging from 13 to 130 nm. The niobium to silicon atomic ratio was varied in the range of 0.

Atomic layer deposition and properties of ZrO/FeO thin films.

Thin solid films consisting of ZrO and FeO were grown by atomic layer deposition (ALD) at 400 °C. Metastable phases of ZrO were stabilized by FeO doping. The number of alternating ZrO and FeO deposition cycles were varied in order to achieve films with different cation ratios.

Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films.

Mixed films of a high-permittivity oxide, ErO, and a magnetic material, FeO, were grown by atomic layer deposition on silicon and titanium nitride at 375 °C using erbium diketonate, ferrocene, and ozone as precursors. Crystalline phases of erbium and iron oxides were formed. Growth into three-dimensional trenched structures was demonstrated.

Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications.

A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used.