Low-loss operation of silicon-on-insulator integrated components at 2.6-2.7 µm.

Development of mid-infrared photonics is gaining attention, driven by a multitude of sensing applications requiring increasingly compact and cost-effective photonics systems. To this end, low-loss operation of µm-scale silicon-on-insulator photonic integration elements is demonstrated for the 2.6-2.

Widely tunable 2 µm hybrid laser using GaSb semiconductor optical amplifiers and a SiN photonics integrated reflector.

Tunable lasers emitting in the 2-3 µm wavelength range that are compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaSb-based semiconductor gain chips with SiN photonic integrated circuits offers an attractive platform. Herein, we utilize the low-loss features of SiN waveguides and demonstrate a hybrid laser comprising a GaSb gain chip with an integrated tunable SiN Vernier mirror.

Hybrid silicon photonics DBR laser based on flip-chip integration of GaSb amplifiers and µm-scale SOI waveguides.

The development of integrated photonics experiences an unprecedented growth dynamic, owing to accelerated penetration to new applications. This leads to new requirements in terms of functionality, with the most obvious feature being the increased need for wavelength versatility. To this end, we demonstrate for the first time the flip-chip integration of a GaSb semiconductor optical amplifier with a silicon photonic circuit, addressing the transition of photonic integration technology towards mid-IR wavelengths.

Precise length definition of active GaAs-based optoelectronic devices for low-loss silicon photonics integration.

The length variation associated with standard cleaving of III-V optoelectronic chips is a major source of loss in the integration with the micron-scale silicon-on-insulator waveguides. To this end, a new, to the best of our knowledge, approach for precise definition of the III-V chip length is reported. The method employs lithography and wet etching of cleave marks outside the active III-V waveguides.