GaO Bipolar Heterojunction-Based Optoelectronic Synapse Array with Visual Attention.

The human brain efficiently processes only a fraction of visual information, a phenomenon termed attentional control, resulting in energy savings and heightened adaptability. Translating this mechanism into artificial visual neurons holds promise for constructing energy-efficient, bioinspired visual systems. Here, we propose a self-rectifying artificial visual neuron (SEVN) based on a NiO/GaO bipolar heterojunction with attentional control on patterns with a target color.

An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics.

Avalanche and surge robustness involve fundamental carrier dynamics under high electric field and current density. They are also prerequisites of any power device to survive common overvoltage and overcurrent stresses in power electronics applications such as electric vehicles, electricity grids, and renewable energy processing. Despite tremendous efforts to develop the next-generation power devices using emerging ultra-wide bandgap semiconductors, the lack of effective bipolar doping has been a daunting obstacle for achieving the necessary robustness in these devices.

Identification and Suppression of Majority Surface States in the Dry-Etched β-GaO.

Surface treatment after dry etching is vital to enhance the surface quality of the material and thus improve device performance. In this Letter, we identified the majority surface states induced by the dry etching of β-GaO and optimized surface treatments to suppress these electrically active defects with the improved performance of Schottky barrier diodes. Transient spectroscopies suggested that the majority traps (-0.