Low-Temperature, Universal Synthetic Route for Mesoporous Metal Oxides by Exploiting Synergistic Effect of Thermal Activation and Plasma.

Mesoporous metal oxides exhibit excellent physicochemical properties and are widely used in various fields, including energy storage/conversion, catalysis, and sensors. Although several soft-template approaches are reported, high-temperature calcination for both metal oxide formation and template removal is necessary, which limits direct synthesis on a plastic substrate for flexible devices. Here, a universal synthetic approach that combines thermal activation and oxygen plasma to synthesize diverse mesoporous metal oxides (VO, VO, TiO, NbO, WO and MoO) at low temperatures (150-200 °C), which can be applicable to a flexible polymeric substrate is introduced.

Role of Oxygen in Amorphous Carbon Hard Mask Plasma Etching.

In the current and next-generation Si-based semiconductor manufacturing processes, amorphous carbon layer (ACL) hard masks are garnering considerable attention for high-aspect-ratio (HAR) etching due to their outstanding physical properties. However, a current limitation is the lack of research on the etching characteristics of ACL hard masks under plasma etching conditions. Given the significant impact of hard mask etching on device quality and performance, a deeper understanding of the etching characteristics of ACL is necessary.

Database Development of SiO Etching with Fluorocarbon Plasmas Diluted with Various Noble Gases of Ar, Kr, and Xe.

In the semiconductor industry, fluorocarbon (FC) plasma is widely used in SiO etching, with Ar typically employed in the dilution of the FC plasma due to its cost effectiveness and accessibility. While it has been reported that plasmas with other noble gases, namely Kr and Xe, have distinct physical properties such as electron density and temperature, their implementation into plasma etching has not been sufficiently studied. In this work, we conducted SiO etching with FC plasmas diluted with different noble gases, i.