Simulation for Large-Area, Inductively-Coupled Plasma Systems Using an Ar/Cl2 Gas Mixture.

As research and development of high-performance devices are becoming increasingly important in the flat panel display industry, new structures and processes are essential to improve the performance of the TFT backplane. Also, high-density plasma systems are needed for new device fabrications. Chlorine-based, inductively-coupled plasma systems are widely used for highly-selective, anisotropic etching of polysilicon layers.

An Investigation of Gate Pulse Induced Degradation in a-InGaZnO Thin Film Transistors.

We investigated the effects of pulsed gate bias on degradation of amorphous indium gallium zinc oxide (a-InGaZnO) thin film transistors (TFTs). The waveform composed of 0 V and 20 V produced little degradation, but the waveform composed of -20 V and 0 V produced a considerable degradation on the turn-on current in the transfer characteristics. Those instabilities were found mostly in TFTs of which the concentration of Zn is higher than the other metallic components (In, Ga).

Negative gate bias and light illumination-induced hump in amorphous InGaZnO thin film transistor.

While observing the transfer characteristics of a-IGZO TFTs, it was noticed that a hump occurred in the subthreshold regime after light and bias stress. This study analyzes the mechanism of the hump occurrence. It was determined that hump characteristics were related with parasitic TFTs which formed at the peripheral edges parallel with the channel direction.