Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO at CF/H/Ar Plasma.

This study investigated the effect of temperature on the aspect-ratio etching of SiO in CF/H/Ar plasma using patterned samples of a 200 nm trench in a low-temperature reactive-ion etching system. Lower temperatures resulted in higher etch rates and aspect ratios for SiO. However, the plasma property was constant with the chuck temperature, indicated by the line intensity ratio from optical emission spectroscopy monitoring of the plasma.

Measurement of re-entry plasma density using microwave reflectometer in laboratory.

A laboratory-scale experiment was conducted to reproduce plasma with properties similar to re-entry plasma and measure the plasma density using a microwave reflectometer system. To reproduce a similar re-entry plasma, a high-temperature refractory anode vacuum arc plasma method was used among arc plasma discharge methods, and arc plasma having high temperature, high speed, and high-density plasma characteristics was discharged inside a vacuum chamber. A hot refractory anode made of tungsten was used to show high-temperature plasma characteristics, and high-density plasma characteristics were demonstrated using re-evaporation around the anode.

Silicon Oxide Etching Process of NF and FNO Plasmas with a Residual Gas Analyzer.

The use of NF is significantly increasing every year. However, NF is a greenhouse gas with a very high global warming potential. Therefore, the development of a material to replace NF is required.