Atomic Layer Deposition of Nickel Using Ni(dmamb) and ZnO Adhesion Layer Without Plasma.

In this study, a novel deposition technique that utilizes diethylzinc (CHZnO) with HO to form a ZnO adhesion layer was proposed. This technique was followed by the deposition of vaporized nickel(II) 1-dimethylamino-2-methyl-2-butoxide (Ni(dmamb)) and H gas to facilitate the deposit of uniform layers of nickel on the ZnO adhesion layer using atomic layer deposition. Deposition temperatures ranged from 220 to 300 °C.

Molecular coupling competing with defects within insulator of the magnetic tunnel junction-based molecular spintronics devices.

Nearly 70 years old dream of incorporating molecule as the device element is still challenged by competing defects in almost every experimentally tested molecular device approach. This paper focuses on the magnetic tunnel junction (MTJ) based molecular spintronics device (MTJMSD) method. An MTJMSD utilizes a tunnel barrier to ensure a robust and mass-producible physical gap between two ferromagnetic electrodes.

Near-Thermal Reactions of Au(S,D) and AuX with CHX (X = Br, I): A Combined Experimental and Computational Analysis.

Reactions of Au(S,D) and AuX with CHX (X = I and Br) were performed in the gas phase by utilizing a selected-ion drift cell reactor. These experiments were done at room temperature as well as reduced temperature (∼200 K) at a total pressure of 3.5 Torr in helium.