We demonstrate low-loss and broadband light transition from III-V functional layers to a Si platform via two-stage adiabatic-crossing coupler waveguides. A 900-µm-long and 2.7-µm-thick III-V film waveguide consisting of a GaInAsP core and InP cladding layers is transferred onto an air-cladding Si photonic chip by the µ-transfer printing (µ-TP) method.
View Article and Find Full Text PDFWe demonstrate sub-millisecond tuning of a prototype parametric tunable dispersion compensator (P-TDC) based on cascaded polarization-diverse four-wave mixing (FWM) process with a fast tunable and highly wavelength-stable pump light source. The pump light source is developed using a tunable distributed amplification chirped sampled grating distributed reflector laser that is fully wavelength tunable by on-chip heaters with a 3-dB frequency response of 45 kHz, resulting in fast dispersion tuning of less than 50 μs without additional timing jitter. The P-TDC is developed as the first prototype to satisfy essential requirements for practical network uses: stable input-polarization diversity, input-wavelength preservation, and seamless dispersion tunability for entire C-band input wavelengths are simultaneously achieved.
View Article and Find Full Text PDF: We have studied the effects of shutter transients (STs) in molecular beam epitaxy (MBE). Two series of samples were grown by MBE and evaluated by X-ray diffraction (XRD) and X-ray reflectivity (XRR) measurements. The effects of STs were evaluated by growth rate (GR) analysis using a combination of growth time (GT) and thickness evaluated by XRD and XRR measurements.
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