Atomistic Compositional Details and Their Importance for Spin Qubits in Isotope-Purified Silicon Quantum Wells.

Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope concentration depth profiles in a SiGe/Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry down to their respective limits of isotope concentrations and depth resolution. Spin-echo dephasing times and valley energy splittings E around have been observed for single spin qubits in this quantum well (QW) heterostructure, pointing toward the suppression of qubit decoherence through hyperfine interaction with crystal host nuclear spins or via scattering between valley states.

Fluctuation Electron Microscopy on Amorphous Silicon and Amorphous Germanium.

Variable resolution fluctuation electron microscopy experiments were performed on self-ion implanted amorphous silicon and amorphous germanium to analyze the medium-range order. The results highlight that the commonly used pair-persistence analysis is influenced by the experimental conditions. Precisely, the structural correlation length Λ, a metric for the medium-range order length scale in the material, obtained from this particular evaluation varies depending on whether energy filtering is used to acquire the data.

Challenges of Electron Correlation Microscopy on Amorphous Silicon and Amorphous Germanium.

Electron correlation microscopy experiments were conducted on amorphous germanium (a-Ge) and amorphous silicon (a-Si) with the goal to study self-diffusion. For this purpose, a series of tilted dark-field images were acquired during in situ heating of the samples in a transmission electron microscope. These experiments show that the measurements are greatly affected by artefacts.

Treating Knock-On Displacements in Fluctuation Electron Microscopy Experiments.

This work investigates how knock-on displacements influence fluctuation electron microscopy (FEM) experiments. FEM experiments were conducted on amorphous silicon, formed by self-ion implantation, in a transmission electron microscope at 300 kV and 60 kV at various electron doses, two different binnings and with two different cameras, a CCD and a CMOS one. Furthermore, energy filtering has been utilized in one case.

Focused Ion Beam Sample Preparation for Thermal and Electrical Transmission Electron Microscopy.

A focused ion beam (FIB) technique describing the preparation of specimens for in situ thermal and electrical transmission electron microscopy is presented in detail. The method can be applied to a wide range of materials and allows the sample to be thinned down to electron transparency while it is attached to the in situ chip. This offers the advantage that the specimen can have a quality in terms of contamination and damage due to the ion beam that is comparable to samples prepared by means of conventional FIB preparation.

Electrochemical Proton Intercalation in Vanadium Pentoxide Thin Films and its Electrochromic Behavior in the near-IR Region.

This work examines the proton intercalation in vanadium pentoxide (V O ) thin films and its optical properties in the near-infrared (near-IR) region. Samples were prepared via direct current magnetron sputter deposition and cyclic voltammetry was used to characterize the insertion and extraction behavior of protons in V O in a trifluoroacetic acid containing electrolyte. With the same setup chronopotentiometry was done to intercalate a well-defined number of protons in the H V O system in the range of x=0 and x=1.

Comparison of Experimental STEM Conditions for Fluctuation Electron Microscopy.

Variable-resolution fluctuation electron microscopy (VR-FEM) data from measurements on amorphous silicon and PdNiP have been obtained at varying experimental conditions. Measurements have been conducted at identical total electron dose and with an identical electron dose normalized to the respective probe size. STEM probes of different sizes have been created by variation of the semi-convergence angle or by defocus.

Structural and Thermal Characterisation of Nanofilms by Time-Resolved X-ray Scattering.

High time resolution in scattering analysis of thin films allows for determination of thermal conductivity by transient pump-probe detection of dissipation of laser-induced heating, TDXTS. We describe an approach that analyses the picosecond-resolved lattice parameter reaction of a gold transducer layer on pulsed laser heating to determine the thermal conductivity of layered structures below the transducer. A detailed modeling of the cooling kinetics by a Laplace-domain approach allows for discerning effects of conductivity and thermal interface resistance as well as basic depth information.

Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures.

Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy, and transmission electron microscopy provide information about the structural state after ion irradiation.

Time-domain electrostatic force spectroscopy on nanostructured lithium-ion conducting glass ceramics: analysis and interpretation of relaxation times.

The nanoscopic electrical properties of LiAlSiO(4) glass ceramics with different degrees of crystallinity chi were studied by means of time-domain electrostatic force spectroscopy (TDEFS). Thereby, a faster relaxation process due to lithium ion movements in the glassy phase and a slower process due to lithium ion movements in the crystallites could be distinguished. Over a broad range of crystallinity values, the TDEFS relaxation times of both processes are Arrhenius activated, with an activation energy being essentially independent of chi and with a pre-exponential factor depending in a systematic fashion on chi.

Fast interfacial ionic conduction in nanostructured glass ceramics.

The hopping movements of mobile ions in a nanostructured LiAlSiO4 glass ceramic are characterized by time-domain electrostatic force spectroscopy (TDEFS). While the macroscopic conductivity spectra are governed by a single activation energy, the nanoscopic TDEFS measurements reveal three different dynamic processes with distinct activation energies. Apart from the ion transport processes in the glassy and crystalline phases, we identify a third process with a very low activation energy, which is assigned to ionic movements at the interfaces between the crystallites and glassy phase.

Nanoscopic study of the ion dynamics in a LiAlSiO4 glass ceramic by means of electrostatic force spectroscopy.

We use time-domain electrostatic force spectroscopy (TD-EFS) for characterising the dynamics of mobile ions in a partially crystallised LiAlSiO4 glass ceramic, and we compare the results of the TD-EFS measurements to macroscopic electrical conductivity measurements. While the macroscopic conductivity spectra are determined by a single dynamic process with an activation energy of 0.72 eV, the TD-EFS measurements provide information about two distinct relaxation processes with different activation energies.