Interfacial oxygen bridges engineering between NbO and graphene towards advanced sodium ion capacitors.

NbO has become a focus of research for its suitability as an anode material in sodium ion capacitors (SICs), due to its open ionic channels. The integration of NbO with reduced graphene oxide (rGO) is known to boost its electrical conductivity. However, the sluggish interfacial charge transfer kinetics and interface collapse of NbO/rGO pose challenges to its rate capability and durability.

Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption.

Nanoscale light sources are demanded vigorously due to rapid development in photonic integrated circuits (PICs). III-V semiconductor nanowire (NW) lasers have manifested themselves as indispensable components in this field, associated with their extremely compact footprint and ultra-high optical gain within the 1D cavity. In this study, the carrier concentrations of indium phosphide (InP) NWs are actively controlled to modify their emissive properties at room temperature.

Resonance-Amplified Terahertz Near-Field Spectroscopy of a Single Nanowire.

Nanoscale material systems are central to next-generation optoelectronic and quantum technologies, yet their development remains hindered by limited characterization tools, particularly at terahertz (THz) frequencies. Far-field THz spectroscopy techniques lack the sensitivity for investigating individual nanoscale systems, whereas in near-field THz nanoscopy, surface states, disorder, and sample-tip interactions often mask the response of the entire nanoscale system. Here, we present a THz resonance-amplified near-field spectroscopy technique that can detect subtle conductivity changes in isolated nanoscale systems─such as a single InAs nanowire─under ultrafast photoexcitation.

Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays.

Highly integrated optoelectronic and photonic systems underpin the development of next-generation advanced optical and quantum communication technologies, which require compact, multiwavelength laser sources at the telecom band. Here, we report on-substrate vertical emitting lasing from ordered InGaAs/InP multi-quantum well core-shell nanowire array epitaxially grown on InP substrate by selective area epitaxy. To reduce optical loss and tailor the cavity mode, a new nanowire facet engineering approach has been developed to achieve controlled quantum well nanowire dimensions with uniform morphology and high crystal quality.

AlGaAs as an Alternative Solar Water Splitting Material: Insights into Performance, Stability, and Future Directions.

This study offers an in-depth examination of aluminum gallium arsenide (AlGaAs) as a high-performance and durable material for photoelectrochemical water splitting, a key method of cost-effective renewable hydrogen production. Purpose-designed pin-AlGaAs photocathodes are demonstrated to yield a remarkable photocurrent density of over 15 mA/cm and an impressive onset potential of 1.11 V vs RHE.

A quantum coherent spin in hexagonal boron nitride at ambient conditions.

Solid-state spin-photon interfaces that combine single-photon generation and long-lived spin coherence with scalable device integration-ideally under ambient conditions-hold great promise for the implementation of quantum networks and sensors. Despite rapid progress reported across several candidate systems, those possessing quantum coherent single spins at room temperature remain extremely rare. Here we report quantum coherent control under ambient conditions of a single-photon-emitting defect spin in a layered van der Waals material, namely, hexagonal boron nitride.

Room-temperature strong coupling in a single-photon emitter-metasurface system.

Solid state single-photon sources with high brightness and long coherence time are promising qubit candidates for modern quantum technology. To prevent decoherence processes and preserve the integrity of the qubits, decoupling the emitters from their surrounding environment is essential. To this end, interfacing single photon emitters (SPEs) with high-finesse cavities is required, especially in the strong coupling regime, when the interaction between emitters can be mediated by cavity fields.

Nanowire Array Breath Acetone Sensor for Diabetes Monitoring.

Diabetic ketoacidosis (DKA) is a life-threatening acute complication of diabetes characterized by the accumulation of ketone bodies in the blood. Breath acetone, a ketone, directly correlates with blood ketones. Therefore, monitoring breath acetone can significantly enhance the safety and efficacy of diabetes care.

Tunable Enhanced Second-Harmonic Generation in InP-InAsP Quantum Well Nanomembranes.

Second-harmonic generation (SHG) offers a convenient approach for infrared-to-visible light conversion in tunable nanoscale light sources and optical communication. Semiconductor nanostructures offer rich possibilities to tailor their nonlinear optical properties. In this study, strong second-harmonic generation in InP nanomembranes with InAsP quantum well (QW) is demonstrated.

Scalable Bright and Pure Single Photon Sources by Droplet Epitaxy on InP Nanowire Arrays.

High-quality quantum light sources are crucial components for the implementation of practical and reliable quantum technologies. The persistent challenge, however, is the lack of scalable and deterministic single photon sources that can be synthesized reproducibly. Here, we present a combination of droplet epitaxy with selective area epitaxy to realize the deterministic growth of single quantum dots in nanowire arrays.

Coupling ultrafine TiO within pyridinic-N enriched porous carbon towards high-rate and long-life sodium ion capacitors.

Coupling TiO within N-doped porous carbon (NPC) is essential for enhancing its Na storage performance. However, the role of different N configurations in NPC in improving the electrochemical performance of TiO is currently unknown. In this study, melamine is deliberately incorporated as a pore-forming agent in the self-assembly process of metal organic framework precursors (NH-MIL-125(Ti)).

An efficient modeling workflow for high-performance nanowire single-photon avalanche detector.

Single-photon detector (SPD), an essential building block of the quantum communication system, plays a fundamental role in developing next-generation quantum technologies. In this work, we propose an efficient modeling workflow of nanowire SPDs utilizing avalanche breakdown at reverse-biased conditions. The proposed workflow is explored to maximize computational efficiency and balance time-consuming drift-diffusion simulation with fast script-based post-processing.

Ferri-hydrite: A Novel Electron-Selective Contact Layer for InP Photovoltaic and Photoelectrochemical Cells.

Solar energy conversion devices with charge-selective contacts are attracting significant research interest as a cost-effective alternative to homojunction counterparts. This study presents a novel approach for fabricating high-performance solar cells based on InP heterojunctions using a solution-processed ferri-hydrite (Fh) electron-selective contact (ESC). The champion cell efficiency of 16.

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition.

Large-area epitaxial growth of III-V nanowires and thin films on van der Waals substrates is key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires and planar structures are grown on hexagonal boron nitride templates using metal organic chemical vapor deposition method without any catalyst or pre-treatments. The effect of basic growth parameters on nanowire yield and thin film morphology is investigated.

An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics.

Avalanche and surge robustness involve fundamental carrier dynamics under high electric field and current density. They are also prerequisites of any power device to survive common overvoltage and overcurrent stresses in power electronics applications such as electric vehicles, electricity grids, and renewable energy processing. Despite tremendous efforts to develop the next-generation power devices using emerging ultra-wide bandgap semiconductors, the lack of effective bipolar doping has been a daunting obstacle for achieving the necessary robustness in these devices.

Lasing in Zn-doped GaAs nanowires on an iron film.

In this work, we demonstrate optically pumped lasing in highly Zn-doped GaAs nanowires (NWs) lying on an iron film. The conically shaped NWs are first covered with an 8 nm thick AlOfilm to prevent atmospheric oxidation and mitigate band-bending effects. Multimode and single-mode lasing have been observed for NWs with a length greater or smaller than 2m, respectively.

Bottom-up, Chip-Scale Engineering of Low Threshold, Multi-Quantum-Well Microring Lasers.

Integrated, on-chip lasers are vital building blocks in future optoelectronic and nanophotonic circuitry. Specifically, III-V materials that are of technological relevance have attracted considerable attention. However, traditional microcavity laser fabrication techniques, including top-down etching and bottom-up catalytic growth, often result in undesirable cavity geometries with poor scalability and reproducibility.

InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection.

Detection of short-wave infrared (SWIR) and mid-wave infrared (MWIR) emissions remains challenging despite their importance in many emerging applications, including night vision, space imaging and remote sensing. III-V compound semiconductor materials such as InAs have an ideal band gap covering a spectral regime from near-infrared (NIR), SWIR to MWIR. However, due to their high dark current, InAs photodetectors normally require a low-temperature operation, which has greatly limited their practical applications.

Vertical Emitting Nanowire Vector Beam Lasers.

Due to the peculiar structured light field with spatially variant polarizations on the same wavefront, vector beams (VBs) have sparked research enthusiasm in developing advanced super-resolution imaging and optical communications techniques. A compact VB nanolaser is intriguing for VB applications in miniaturized photonic integrated circuits. However, determined by the diffraction limit of light, it is a challenge to realize a VB nanolaser in the subwavelength scale because the VB lasing modes should have laterally structured distributions.

Protocol for scalable top-down fabrication of InP nanopillars using a self-assembled random mask technique.

Nanostructured III-V semiconductors are attractive for solar energy conversion applications owing to their excellent light harvesting and optoelectronic properties. Here, we present a protocol for scalable fabrication of III-V semiconductor nanopillars using a simple and cost-effective top-down approach, combining self-assembled random mask and plasma etching techniques. We describe the deposition of Au/SiO layers to prepare random etch mask.

Core-shell GaN/AlGaN nanowires grown by selective area epitaxy.

GaN/AlGaN core-shell nanowires with various Al compositions have been grown on GaN nanowire array using selective area metal organic chemical vapor deposition technique. Growth of the AlGaN shell using pure N carrier gas resulted in a smooth surface for the nonpolar -plane sidewalls with superior optical properties, whereas, growth using a mixed N/H carrier gas resulted in a striated surface similar to the commonly observed morphology in the growth of nonpolar III-nitrides. The Al compositions in the AlGaN shells are found to be less than the gas phase input ratio.

Electrically programmable solid-state metasurfaces via flash localised heating.

In the last decades, metasurfaces have attracted much attention because of their extraordinary light-scattering properties. However, their inherently static geometry is an obstacle to many applications where dynamic tunability in their optical behaviour is required. Currently, there is a quest to enable dynamic tuning of metasurface properties, particularly with fast tuning rate, large modulation by small electrical signals, solid state and programmable across multiple pixels.

Strain-Engineered Multilayer Epitaxial Lift-Off for Cost-Efficient III-V Photovoltaics and Optoelectronics.

The efficient removal of epitaxially grown materials from their host substrate has a pivotal role in reducing the cost and material consumption of III-V solar cells and in making flexible thin-film devices. A multilayer epitaxial lift-off process is demonstrated that is scalable in both film size and in the number of released films. The process utilizes in-built, individually engineered epitaxial strain in each film to tailor the bending without the need for external layers to induce strain.