Synopsis of recent research by authors named "Haozhe Lu"
- Haozhe Lu's research primarily focuses on enhancing the performance and scalability of aligned carbon nanotube-based (A-CNT) field-effect transistors (FETs) for advanced semiconductor applications, addressing the lag in electronic performance of n-type compared to p-type transistors.
- Recent studies involve a thorough investigation of the microstructural properties and interfacial relationships within A-CNT arrays using high-resolution transmission electron microscopy, leading to the identification of specific structural parameters critical for optimizing A-CNT FETs.
- Additionally, Lu has developed innovative techniques for device preparation and substrate surface enhancement, enabling improved fabrication processes for A-CNT transistors by minimizing residual contamination and stress at the nanoscale interfaces.
