ACS Appl Mater Interfaces
October 2019
Elemental alloying in monolayer, two-dimensional (2D) transition metal dichalcogenides (TMDs) promises unprecedented ability to modulate their electronic structure leading to unique optoelectronic properties. MoS monolayer based photodetectors typically exhibit a high photoresponsivity but suffer from a low response time. Here we develop a new approach for Sn alloying in MoS monolayers based on the synergy of the customized chemical vapor deposition (CVD) and the effects of common salt (NaCl) to produce high-quality and large-size MoSnS ( < 0.
View Article and Find Full Text PDFHeterostructures of two-dimensional (2D) transition metal dichalcogenides (TMDs) offer attractive prospects for practical applications by combining unique physical properties that are distinct from those of traditional structures. In this paper, we demonstrate a three-stage chemical vapor deposition method for the growth of bilayer MoS-WS/WS heterostructures with the bottom layers being the lateral MoS-center/WS-edge monolayer heterostructures and the top layers being the WS monolayers. The alternative growth of lateral and vertical heterostructures can be realized by adjusting both the temperature and the carrier gas flow direction.
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