Publications by authors named "Haoshen Ye"

The coexistence of electric and magnetic orders with intrinsic coupling, referred to as magnetoelectric coupling in multiferroics, has been extensively studied in oxide materials but remains relatively unexplored in van der Waals materials. Among these, CuCrPS (CCPS) is notable for its emergent antiferromagnetic (AFM) and antiferroelectric (AFE) characteristics. However, investigations into magnetoelectric coupling in CCPS are limited, and the effects of dopants on its magnetic properties have yet to be fully addressed.

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The vertical integration of a ferromagnetic monolayer and a ferroelectric monolayer into van der Waals heterostructures offers a promising route to achieve two-dimensional multiferroic semiconductors owing to the lack of intrinsic single-phase multiferroic materials in nature. In this study, we propose a VNH/AlO van der Waals magnetoelectric multiferroic heterostructure and investigate its electronic, magnetic, and transport properties using density functional theory combined with the Boltzmann transport theory. The VNH monolayer is a room-temperature ferromagnetic semiconductor with a band gap of 0.

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Abundant chemical diversity and structural tunability make organic-inorganic hybrid perovskites (OIHPs) a rich ore for ferroelectrics. However, compared with their inorganic counterparts such as BaTiO, their ferroelectric key properties, including large spontaneous polarization (P), low coercive field (E), and strong second harmonic generation (SHG) response, have long been great challenges, which hinder their commercial applications. Here, a quasi-one-dimensional OIHP DMAGeI (DMA = Dimethylamine) is reported, with notable ferroelectric attributes at room temperature: a large P of 24.

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A van der Waals intrinsic ferromagnet with double magnetic atom layers is of great interest for both revealing fundamental physics and exploring promising applications in low-dimensional spintronics. Here, the magnetic and electronic properties of the van der Waals ferromagnet MgVS monolayer are studied under electrostatic doping using first-principles calculations. A MgVS monolayer presents the desired physical properties such as that of being a half-semiconductor with a direct bandgap of 1.

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