Manipulating Magnetic Damping of Fe/GeTe Heterostructures by Band Engineering.

Understanding and manipulating magnetic damping, particularly in magnetic heterostructures, is crucial for fundamental research, versatile engineering, and optimization. Although magnetic damping can be enhanced by the band hybridization between ferromagnetic and nonmagnetic materials at the interface, the contribution of individual subbands on the hybridized bands to magnetic damping is fully unexplored. Here, it is found that magnetic damping α is modified by the Fermi level in Fe/GeTe heterostructures via Bi doping.

Anisotropic Nonlocal Damping in Ferromagnet/α-GeTe Bilayers Enabled by Splitting Energy Bands.

The understanding and manipulation of anisotropic Gilbert damping is crucial for both fundamental research and versatile engineering and optimization. Although several works on anisotropic damping have been reported, no direct relationship between the band structure and anisotropic damping was established. Here, we observed an anisotropic damping in Fe/GeTe manipulated by the symmetric band structures of GeTe via angle-resolved photoemission spectroscopy.

Surface coupling in BiSe ultrathin films by screened Coulomb interaction.

Single-particle band theory has been very successful in describing the band structure of topological insulators. However, with decreasing thickness of topological insulator thin films, single-particle band theory is insufficient to explain their band structures and transport properties due to the existence of top and bottom surface-state coupling. Here, we reconstruct this coupling with an equivalently screened Coulomb interaction in BiSe ultrathin films.

Dual Topology of Dirac Electron Transport and Photogalvanic Effect in Low-Dimensional Topological Insulator Superlattices.

Dual topological insulators, simultaneously protected by time-reversal symmetry and crystalline symmetry, open great opportunities to explore different symmetry-protected metallic surface states. However, the conventional dual topological states located on different facets hinder integration into planar opto-electronic/spintronic devices. Here, dual topological superlattices (TSLs) Bi Se -(Bi /Bi Se ) with limited stacking layer number N are constructed.