Enhancement of Carrier Mobility in Multilayer InSe Transistors by van der Waals Integration.

Two-dimensional material indium selenide (InSe) holds great promise for applications in electronics and optoelectronics by virtue of its fascinating properties. However, most multilayer InSe-based transistors suffer from extrinsic scattering effects from interface disorders and the environment, which cause carrier mobility and density fluctuations and hinder their practical application. In this work, we employ the non-destructive method of van der Waals (vdW) integration to improve the electron mobility of back-gated multilayer InSe FETs.

Pt single atoms meet metal-organic frameworks to enhance electrocatalytic hydrogen evolution activity.

The electrochemical hydrogen evolution reaction (HER) effectively produces clean, renewable, and sustainable hydrogen; however, the development of efficient electrocatalysts is required to reduce the high energy barrier of the HER. Herein, we report two excellent single-atom (SA)/metal-organic framework (MOF) composite electrocatalysts (Pt-MIL100(Fe) and Pt-MIL101(Cr)) for HER. The obtained Pt-MIL100(Fe) and Pt-MIL101(Cr) electrocatalysts exhibit overpotentials of 60 and 61 mV at 10 mA cm, respectively, which are close to that of commercial Pt/C (38 mV); they exhibit overpotentials of 310 and 288 mV at 200 mA cm, respectively, which are comparable to that of commercial Pt/C (270 mV).

Electronic and Optoelectronic Monolayer WSe Devices via Transfer-Free Fabrication Method.

Monolayer transition metal dichalcogenides (TMDs) have drawn significant attention for their potential applications in electronics and optoelectronics. To achieve consistent electronic properties and high device yield, uniform large monolayer crystals are crucial. In this report, we describe the growth of high-quality and uniform monolayer WSe film using chemical vapor deposition on polycrystalline Au substrates.