Geometrically kinetic competition mechanism to shape control on digenite nanocrystals with silica vapor in APCVD.

We report shape control synthesis of digenite nanosheets (growing perpendicular to the <111> direction) and nanowires (growing along the <111> direction) through control on the silica vapor pressure in the system. Critical vapor pressures for silica sheath initialization and crystal shape maintenance are determined in two sets of experiments. The geometrically kinetic competition (GKC) mechanism, which was first proposed in our former work (J.

Silica-sheathed pyrrotite nanowires: Synthesis and mechanism.

We have studied the growth of silica-sheathed 3C-Fe7S8 products on silicon substrates with FeCl2 and sulfur precursors at the temperature region of 600-800 degrees C. On the basis of the crystal structure of Fe7S8, we have proposed a model including the kinetic competition of the adsorption of silica species on Fe2-Fe3-Fe4 units at the 4Fe layer and on the Fe2-Fe3-Fe4-Fe5 units parallel to the c-axis. Using this model, we have not only explained all the experimental phenomena but also especially prepared Fe7S8 nanowires at 650 degrees C by introducing water into the reaction system.

Studies of Langmuir-Blodgett films of an ion pair metal complex containing Eu(III)-Ru(II) dual chromophores.

A surfactant ion-pair complex, [Ru(bpy)(2)L][Eu(NTA)(4)](2) (in which L = 1-docosyl-2-(2- pyridyl)benzimidazole, bpy = 2,2'-bipyridine, and NTA = 4,4,4-trifluoro-1-(2-naphthyl)-1,3-butanedionato) has been synthesized. The surface pressure-area isotherm measurements show that the complex forms a stable Langmuir film at the air-water interface without adding any electrolytes into the subphase. The monolayers formed at the surface pressures of 5 mN m(-1) and 20 mN m(-1), have been successfully transferred onto glass and quartz substrates with the transfer ratios close to unity.

Orthogonal PbS nanowire arrays and networks and their Raman scattering behavior.

Three-dimensional, orthogonal lead sulfide (PbS) nanowire arrays and networks have been prepared by using a simple, atmospheric pressure chemical vapor deposition (APCVD) method. These uniform nanowires (average diameter 30 nm) grow epitaxially from the surface of the initial PbS crystal seeds and form orthogonal arrays and networks in space. The growth mechanism has been explored, and the process was classified as homogeneous, epitaxial growth in the 200 directions.

A general atmospheric pressure chemical vapor deposition synthesis and crystallographic study of transition-metal sulfide one-dimensional nanostructures.

A series of transition-metal sulfide one-dimensional (1D) nanostructures have been synthesized by means of a general atmospheric pressure, chemical vapor deposition (APCVD) strategy. Vapour-liquid-solid (VLS) and vapour-solid (VS) mechanisms, along with the results of SEM and TEM observations, were used to explain the formation of these nanostructures. The regularity of the growth in the direction of the hexagonal nanowire is explored; we find that it prefers to grow along (1 0 0), (1 1 0), or (0 0 x) directions owing to particular crystal structures.