Effects of Substrate Temperature on Optical, Structural, and Surface Properties of Metal-Organic Vapor Phase Epitaxy-Grown MgZnO Films.

MgZnO possesses a tunable bandgap and can be prepared at relatively low temperatures, making it suitable for developing optoelectronic devices. MgZnO (~0.1) films were grown on sapphire by metal-organic vapor phase epitaxy under different substrate-growth temperatures of 350-650 °C and studied by multiple characterization technologies like X-ray diffraction (XRD), spectroscopic ellipsometry (SE), Raman scattering, extended X-ray absorption fine structure (EXAFS), and first-principle calculations.

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy.

GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180-1500 nm.

Strain and atomic stacking of bismuth thin film in its quasi-van der Waals epitaxy on (111) Si substrate.

We report on the structural properties of Bi thin films grown on (111) Si substrates with a thickness of 22-30 BL. HRXRD and EBSD measurements show that these Bi films are mainly composed of twinning grains in the (0003) direction. The grain size can be as large as tens of microns.

Guard Ring Design to Prevent Edge Breakdown in Double-Diffused Planar InGaAs/InP Avalanche Photodiodes.

We report on the design of an attached guard ring (AGR) and a floating guard ring (FGR) in a planar separate absorption, grading, charge, and multiplication InGaAs/InP avalanche photodiode to prevent premature edge breakdowns. The depths of the two Zn diffusions were utilized to manipulate the guard ring structures. Results from TCAD simulation indicate that the optimal AGR diffusion depth is right at the turning point where the breakdown current shifts from the edge of active region to the AGR region.

Structural properties of Bi thin film grown on Si (111) by quasi-van der Waals epitaxy.

Crystallinity of an 80-nm-thick bismuth thin film grown on Si (111) substrate by MBE was investigated. The highly (0003) textured Bi film contains two twinning domains with different bilayer stacking sequences. The basic lattice parameters c and a as well as b, the bilayer thickness, of the two domains were determined from a series of X-ray diffraction (XRD) measurements, and found that the differences are within 0.

A New Fitting Method for Ambipolar Diffusion Length Extraction in Thin Film Structures Using Photoluminescence Measurement with Scanning Excitation.

A new simple method is proposed to extract the ambipolar diffusion length for two-dimensional (2D) electronic transport in thin film structures using a scanning photoluminescence microscopy (SPLM) setup. No spatially-resolved photoluminescence detection methods are required. By measuring the excitation-position-dependent PL intensity across the edge of a semiconductor, ambipolar diffusion length can be extracted from the SPLM profile through a simple analytic fitting function.

A New Analytic Formula for Minority Carrier Decay Length Extraction from Scanning Photocurrent Profiles in Ohmic-Contact Nanowire Devices.

Spatially resolved current measurements such as scanning photocurrent microscopy (SPCM) have been extensively applied to investigate carrier transport properties in semiconductor nanowires. A traditional simple-exponential-decay formula based on the assumption of carrier diffusion dominance in the scanning photocurrent profiles can be applied for carrier diffusion length extraction using SPCM in Schottky-contact-based or p-n junction-based devices where large built-in electric fields exist. However, it is also important to study the electric-field dependent transport properties in widely used ohmic-contact nanowire devices where the assumption of carrier diffusion dominance is invalid.

Effect of Focused Ion Beam Imaging on the Crystallinity of InAs.

We investigated the effect of focused ion beam (FIB) imaging on the crystallinity of InAs using Raman scattering. A spatial correlation model was used to fit the broad band induced by FIB imaging. The fitting gives a correlation length of ~42 Å for the noisiest image condition (with an ion fluence of 7.

InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4 μm.

The mid-infrared whispering-gallery-mode disk cavities with InAs0.85Sb0.15/InAs0.

All-optical switching in GaAs microdisk resonators by a femtosecond pump-probe technique through tapered-fiber coupling.

We demonstrate ultrafast all-optical switching in GaAs microdisk resonators using a femtosecond pump-probe technique through tapered-fiber coupling. The temporal tuning of the resonant modes resulted from the refractive index change due to photoexcited carrier density variation inside the GaAs microdisk resonator. Transmission through the GaAs microdisk resonator can be modulated by more than 10 dB with a switching time window of 8 ps in the switch-off operation using pumping pulses with energies as low as 17.

Electron transport in a GaPSb film.

We have performed transport measurements on a gallium phosphide antimonide (GaPSb) film grown on GaAs. At low temperatures (T), transport is governed by three-dimensional Mott variable range hopping (VRH) due to strong localization. Therefore, electron-electron interactions are not significant in GaPSb.

The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures.

The amplitudes of terahertz radiation are measured for a series of GaAs surface intrinsic-N(+) structures with various built-in surface electric fields as the bias. As the surface field is lower than the so-called "critical electric field" related with the energy difference between the Gamma to L valley of the semiconductor, the amplitude is proportional to the product of the surface field and the number of photo-excited carriers. As the surface field exceeds the critical field, the amplitude is independent of the surface field but proportional to the product of the critical field and the number of the photo-excited carriers.