Surface potentials of acceptor- and donor-doped CeO thin films and their relation to oxygen surface exchange.

Surface Fermi level positions, ionisation potentials, and work functions of acceptor-, donor-, and nominally undoped CeO have been determined by means of photoelectron spectroscopy on films grown with different surface orientation and preparation conditions. The Fermi energy varies in accordance with the doping and oxygen activity. The ionisation potentials are largely unaffected by the preparation conditions and surface orientation.

Oxygen Surface Exchange and Tracer Diffusion in Differently Oriented Thin Films of Gd-Doped CeO.

The exchange of O between gaseous molecular oxygen and thin-film samples of CeGdO with two different, nominal surface orientations [(111) and (110)] was studied. Oxygen isotope exchange experiments were conducted in the temperature range of 573 ≤ /K ≤ 673 at an oxygen activity of O = 0.2.

In Situ Hall Effect Monitoring of Vacuum Annealing of In₂O₃:H Thin Films.

Hydrogen doped In₂O₃ thin films were prepared by room temperature sputter deposition with the addition of H₂O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm²/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD), optical transmission and Hall effect measurements.

Metal nanotubes and nanowires with rhombohedral cross-section electrolessly deposited in mica templates.

Electroless plating is a facile wet-chemical process for the creation of metal thin films on arbitrary substrates, which can be used to produce intricate nanomaterials. In this study, we demonstrate how nanotubes and nanowires can be electrolessly deposited in the rhombohedral pores of ion-track etched muscovite mica templates. Mutual optimization of the activation and plating reactions proved to be essential for the fabrication of well-defined nanostructures of an aspect ratio (length-to-diameter) of up to approximately 70.