Growth of large sized two-dimensional MoS flakes in aqueous solution.

A large lateral size and low dimensions are prerequisites for next generation electronics. Since the first single layer MoS transistor reported by Kis's group in 2011, layered transition metal dichalcogenides (TMDs) have been demonstrated to be the ideal candidate for next generation electronics. However, the development of large scale and low cost growth techniques is a crucial step towards TMDs' inclusion in modern electronics and photoelectronics.