Effective lifting of the topological protection of quantum spin Hall edge states by edge coupling.

The scientific interest in two-dimensional topological insulators (2D TIs) is currently shifting from a more fundamental perspective to the exploration and design of novel functionalities. Key concepts for the use of 2D TIs in spintronics are based on the topological protection and spin-momentum locking of their helical edge states. In this study we present experimental evidence that topological protection can be (partially) lifted by pairwise coupling of 2D TI edges in close proximity.

Emergent quantum Hall effects below 50 mT in a two-dimensional topological insulator.

The realization of the quantum spin Hall effect in HgTe quantum wells has led to the development of topological materials, which, in combination with magnetism and superconductivity, are predicted to host chiral Majorana fermions. However, the large magnetization in conventional quantum anomalous Hall systems makes it challenging to induce superconductivity. Here, we report two different emergent quantum Hall effects in (Hg,Mn)Te quantum wells.

Survival of the Quantum Anomalous Hall Effect in Orbital Magnetic Fields as a Consequence of the Parity Anomaly.

Recent experimental progress in condensed matter physics enables the observation of signatures of the parity anomaly in two-dimensional Dirac-like materials. Using effective field theories and analyzing band structures in external out-of-plane magnetic fields (orbital fields), we show that topological properties of quantum anomalous Hall (QAH) insulators are related to the parity anomaly. We demonstrate that the QAH phase survives in orbital fields, violates the Onsager relation, and can be therefore distinguished from a quantum Hall (QH) phase.

Topological superconductivity in a phase-controlled Josephson junction.

Topological superconductors can support localized Majorana states at their boundaries. These quasi-particle excitations obey non-Abelian statistics that can be used to encode and manipulate quantum information in a topologically protected manner. Although signatures of Majorana bound states have been observed in one-dimensional systems, there is an ongoing effort to find alternative platforms that do not require fine-tuning of parameters and can be easily scaled to large numbers of states.

Universality and Stability of the Edge States of Chiral-Symmetric Topological Semimetals and Surface States of the Luttinger Semimetal.

We theoretically demonstrate that the chiral structure of the nodes of nodal semimetals is responsible for the existence and universal local properties of the edge states in the vicinity of the nodes. We perform a general analysis of the edge states for an isolated node of a 2D semimetal, protected by chiral symmetry and characterized by the topological winding number N. We derive the asymptotic chiral-symmetric boundary conditions and find that there are N+1 universal classes of them.

Weak Localization and Antilocalization in Topological Materials with Impurity Spin-Orbit Interactions.

Topological materials have attracted considerable experimental and theoretical attention. They exhibit strong spin-orbit coupling both in the band structure (intrinsic) and in the impurity potentials (extrinsic), although the latter is often neglected. In this work, we discuss weak localization and antilocalization of massless Dirac fermions in topological insulators and massive Dirac fermions in Weyl semimetal thin films, taking into account both intrinsic and extrinsic spin-orbit interactions.

Observation of the universal magnetoelectric effect in a 3D topological insulator.

The electrodynamics of topological insulators (TIs) is described by modified Maxwell's equations, which contain additional terms that couple an electric field to a magnetization and a magnetic field to a polarization of the medium, such that the coupling coefficient is quantized in odd multiples of α/4π per surface. Here we report on the observation of this so-called topological magnetoelectric effect. We use monochromatic terahertz (THz) spectroscopy of TI structures equipped with a semitransparent gate to selectively address surface states.

Electron-hole asymmetry of the topological surface states in strained HgTe.

Topological insulators are a new class of materials with an insulating bulk and topologically protected metallic surface states. Although it is widely assumed that these surface states display a Dirac-type dispersion that is symmetric above and below the Dirac point, this exact equivalence across the Fermi level has yet to be established experimentally. Here, we present a detailed transport study of the 3D topological insulator-strained HgTe that strongly challenges this prevailing viewpoint.

Accessing topological superconductivity via a combined STM and renormalization group analysis.

The search for topological superconductors has recently become a key issue in condensed matter physics, because of their possible relevance to provide a platform for Majorana bound states, non-Abelian statistics, and quantum computing. Here we propose a new scheme which links as directly as possible the experimental search to a material-based microscopic theory for topological superconductivity. For this, the analysis of scanning tunnelling microscopy, which typically uses a phenomenological ansatz for the superconductor gap functions, is elevated to a theory, where a multi-orbital functional renormalization group analysis allows for an unbiased microscopic determination of the material-dependent pairing potentials.

Magneto-optics of massive dirac fermions in bulk Bi2Se3.

We report on magneto-optical studies of Bi2Se3, a representative member of the 3D topological insulator family. Its electronic states in bulk are shown to be well described by a simple Dirac-type Hamiltonian for massive particles with only two parameters: the fundamental band gap and the band velocity. In a magnetic field, this model implies a unique property-spin splitting equal to twice the cyclotron energy: Es=2Ec.

Nonsinusoidal current-phase relationship in Josephson junctions from the 3D topological insulator HgTe.

We use superconducting quantum interference device microscopy to characterize the current-phase relation (CPR) of Josephson junctions from the three-dimensional topological insulator HgTe (3D HgTe). We find clear skewness in the CPRs of HgTe junctions ranging in length from 200 to 600 nm. The skewness indicates that the Josephson current is predominantly carried by Andreev bound states with high transmittance, and the fact that the skewness persists in junctions that are longer than the mean free path suggests that the effect may be related to the helical nature of the Andreev bound states in the surface of HgTe.

One-dimensional weak antilocalization due to the berry phase in HgTe wires.

We study the weak antilocalization (WAL) effect in the magnetoresistance of narrow HgTe wires fabricated in quantum wells with normal and inverted band ordering. Measurements at different gate voltages indicate that the WAL is only weakly affected by Rashba spin-orbit splitting and persists when the Rashba splitting is about zero. The WAL amplitude in wires with normal band ordering is an order of magnitude smaller than for wires with an inverted band structure.

Proposal for an all-electrical detection of crossed Andreev reflection in topological insulators.

Using a generalized wave matching method we solve the full scattering problem for quantum spin Hall insulator-superconductor (SC)-quantum spin Hall insulator junctions. We find that for systems narrow enough so that the bulk states in the SC part couple both edges, the crossed Andreev reflection (CAR) is significant and the electron cotunneling (T) and CAR become spatially separated. We study the effectiveness of this separation as a function of the system geometry and the level of doping in the SC.

Induced superconductivity in the three-dimensional topological insulator HgTe.

A strained and undoped HgTe layer is a three-dimensional topological insulator, in which electronic transport occurs dominantly through its surface states. In this Letter, we present transport measurements on HgTe-based Josephson junctions with Nb as a superconductor. Although the Nb-HgTe interfaces have a low transparency, we observe a strong zero-bias anomaly in the differential resistance measurements.

Quantum Hall superfluids in topological insulator thin films.

Three-dimensional topological insulators have protected Dirac-cone surface states. In this Letter we argue that gapped excitonic superfluids with spontaneous coherence between top and bottom surfaces can occur in the topological insulator (TI)-thin-film quantum Hall regime. We find that the large dielectric constants of TI materials increase the layer separation range over which coherence survives and decrease the superfluid sound velocity, but have little influence on the superfluid density or on the charge gap.

Quantum Hall effect from the topological surface states of strained bulk HgTe.

We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semimetallic HgTe, which thus becomes a three-dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures.

Backscattering of Dirac fermions in HgTe quantum wells with a finite gap.

The density-dependent mobility of n-type HgTe quantum wells with inverted band ordering has been studied both experimentally and theoretically. While semiconductor heterostructures with a parabolic dispersion exhibit an increase in mobility with carrier density, high-quality HgTe quantum wells exhibit a distinct mobility maximum. We show that this mobility anomaly is due to backscattering of Dirac fermions from random fluctuations of the band gap (Dirac mass).

Ballistic quantum spin Hall state and enhanced edge backscattering in strong magnetic fields.

The quantum spin Hall (QSH) state, observed in a zero magnetic field in HgTe quantum wells, respects the time-reversal symmetry and is distinct from quantum Hall (QH) states. We show that the QSH state persists in strong quantizing fields and is identified by counterpropagating (helical) edge channels with nonlinear dispersion inside the band gap. If the Fermi level is shifted into the Landau-quantized conduction or valence band, we find a transition between the QSH and QH regimes.

Spin-Hall effect and spin-Coulomb drag in doped semiconductors.

In this review, we describe in detail two important spin-transport phenomena: the extrinsic spin-Hall effect (coming from spin-orbit interactions between electrons and impurities) and the spin-Coulomb drag. The interplay of these two phenomena is analyzed. In particular, we discuss the influence of scattering between electrons with opposite spins on the spin current and the spin accumulation produced by the spin-Hall effect.

Phase diagram of the spin Hall effect.

We obtain analytic formulas for the frequency-dependent spin-Hall conductivity of a two-dimensional electron gas (2DEG) in the presence of impurities, linear spin-orbit Rashba interaction, and external magnetic field perpendicular to the 2DEG. We show how different mechanisms (skew scattering, side jump, and spin precession) can be brought in or out of focus by changing controllable parameters such as frequency, magnetic field, and temperature. We find, in particular, that the dc spin-Hall conductivity vanishes in the absence of a magnetic field, while a magnetic field restores the skew-scattering and side jump contributions proportionally to the ratio of magnetic and Rashba fields.

Spin-Hall effect in a [110] GaAs quantum well.

A self-consistent treatment of the spin-Hall effect requires consideration of the spin-orbit coupling and electron-impurity scattering on equal footing. This is done here for the experimentally relevant case of a [110] GaAs quantum well [Sih, Nature Phys. 1, 31 (2005)].