Sub-100 Hz intrinsic linewidth 852 nm silicon nitride external cavity laser.

We demonstrate an external cavity laser with intrinsic linewidth below 100 Hz around an operating wavelength of 852 nm, selected for its relevance to laser cooling and manipulation of cesium atoms. This system achieves a maximum CW output power of 24 mW, a wavelength tunability over 10 nm, and a side-mode suppression ratio exceeding 50 dB. This performance level is facilitated by careful design of a low-loss integrated silicon nitride photonic circuit serving as the external cavity combined with commercially available semiconductor gain chips.

Realization of a wide steering end-fire facet optical phased array using silicon rich silicon nitride.

The design, fabrication, and characterization of a 16-element optical phased array (OPA) using a high index (n = 3.1) silicon-rich silicon nitride (SRN) is demonstrated. We present one-dimensional beam steering with end-fire facet antennas over a wide steering range of >115° at a fixed wavelength of 1525 nm.

Efficient and compact thermo-optic phase shifter in silicon-rich silicon nitride.

The design, fabrication, and characterization of low-loss ultra-compact bends in high-index (=3.1 at =1550) plasma-enhanced chemical vapor deposition silicon-rich silicon nitride (SRN) were demonstrated and utilized to realize efficient, small footprint thermo-optic phase shifter. Compact bends were structured into a folded waveguide geometry to form a rectangular spiral within an area of 65×65µ, having a total active waveguide length of 1.

Demonstration of the DC-Kerr effect in silicon-rich nitride.

We demonstrate the DC-Kerr effect in plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) and use it to demonstrate a third order nonlinear susceptibility, , as high as (6±0.58)×10/. We employ spectral shift versus applied voltage measurements in a racetrack resonator as a tool to characterize the nonlinear susceptibilities of these films.

Thermo-optic properties of silicon-rich silicon nitride for on-chip applications.

We demonstrate the thermo-optic properties of silicon-rich silicon nitride (SRN) films deposited using plasma-enhanced chemical vapor deposition (PECVD). Shifts in the spectral response of Mach-Zehnder interferometers (MZIs) as a function of temperature were used to characterize the thermo-optic coefficients of silicon nitride films with varying silicon contents. A clear relation is demonstrated between the silicon content and the exhibited thermo-optic coefficient in silicon nitride films, with the highest achievable coefficient being as high as (1.