Self-aligned T-gate high-purity semiconducting carbon nanotube RF transistors operated in quasi-ballistic transport and quantum capacitance regime.

Carbon nanotube RF transistors are predicted to offer good performance and high linearity when operated in the ballistic transport and quantum capacitance regime; however, realization of such transistors has been very challenging. In this paper, we introduce a self-aligned fabrication method for carbon nanotube RF transistors, which incorporate a T-shaped (mushroom-shaped) aluminum gate, with oxidized aluminum as the gate dielectric. In this way, the channel length can be scaled down to 140 nm, which enables quasi-ballistic transport, and the gate dielectric is reduced to 2-3 nm aluminum oxide, leading to quasi-quantum capacitance operation.