Electrospinning and galvanic displacement reaction are combined to fabricate ultra-long hollow chalcogen and chalcogenide nanofibers in a cost-effective and high throughput manner. This procedure exploits electrospinning to fabricate ultra-long sacrificial nanofibers with controlled dimensions and morphology, thereby imparting control over the composition and shape of the nanostructures evolved during galvanic displacement reaction. It is believed to be a general route to form various ultra-long hollow semiconducting nanofibers.
View Article and Find Full Text PDFJ Nanosci Nanotechnol
January 2011
Recently, electromagnetic interference (EMI) and electromagnetic compatibility (EMC) have become serious problems due to the growth of electronic device and next generation telecommunication. It is necessary to develop new electromagnetic wave absorbing material to overcome the limitation of electromagnetic wave shielding materials. The EMI attenuation is normally related to magnetic loss and dielectric loss.
View Article and Find Full Text PDFIn this study, we fabricated Fe nanofibers that had a high aspect ratio and were coated by an oxidation protection layer, because electromagnetic properties are affected by the aspect ratio and oxidized layers. PVP/Fe salt nanofibers were prepared by an electrospinning method using an optimized concentration of PVP solution with Iron(lll) nitrate nonahydrate (Fe (NO3)3.9H2O) solution to apply a high voltage.
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