We report the fabrication of an inverted structure solar cell with all-inorganic lead-free perovskite CsSnZnBr alloy thin films grown by physical vapor codeposition of CsBr, SnBr, and ZnBr. It was found that the deposited CsSnZnBr perovskite alloy thin films exhibited improved morphological characteristics (larger grain sizes, lower pinhole density, and improved flatness) compared to the CsSnBr thin film. The incorporation of 4% Zn (CsSnZnBr, abbreviated as 4Zn) resulted in a bandgap narrowing of ∼20 meV compared to CsSnBr with the upshift of the valence band maximum and conduction band minimum of ∼0.
View Article and Find Full Text PDFPolymer-based dielectrics have attracted considerable attention for a wide range of applications as energy storage devices with high power. However, high loss from low thermal conductivity () and leaky current may limit their practical utilization greatly. To overcome these issues, two-dimensional hexagonal boron nitride (h-BN) modified with polydopamine (PDA) and metal palladium nanoparticles (h-BN@PDA@Pd NPs) are introduced into a poly(vinylidene fluoride-hexafluoropropylene) P(VDF-HFP) copolymer matrix.
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