Positron Annihilation Lifetime Spectroscopy Insight on Free Volume Conversion of Nanostructured MgAlO Ceramics.

Herein we demonstrate the specifics of using the positron annihilation lifetime spectroscopy (PALS) method for the study of free volume changes in functional ceramic materials. Choosing technological modification of nanostructured MgAlO spinel as an example, we show that for ceramics with well-developed porosity positron annihilation is revealed through two channels: positron trapping channel and ortho-positronium decay. Positron trapping in free-volume defects is described by the second component of spectra and ortho-positronium decay process by single or multiple components, depending on how well porosity is developed and on the experimental configuration.

Optical and Vibrational Spectra of CsCl-Enriched GeS2-Ga2S3 Glasses.

Optical and FTIR spectroscopy was employed to study the properties of 80GeS2-20Ga2S3-CsCl chalcohalide glasses with CsCl additives in a temperature range of 77-293 K. It is shown that CsCl content results in the shift of fundamental absorption edge in the visible region. Vibrational bands in FTIR spectra of (80GeS2-20Ga2S3)100 - х (СsCl) x (x = 5, 10, and 15) are identified near 2500 cm(-1), 3700 cm(-1),, around 1580 cm(-1), and a feature at 1100 cm(-1).

Effect of Radiation on the Electrical Properties of PEDOT-Based Nanocomposites.

Systematic evaluation of the influence of radiation on the electrical response of hybrid nanocomposites obtained by adding multi-walled carbon nanotubes into poly(3,4-ethylenedioxythiophene) and poly(styrenesulfonate) host matrix is presented. Variations of resistance and conductivity of nanocomposites depending on the volume fraction of nanotubes in the matrix, ionizing radiation dosage, and temperature are analyzed.

Random nanostructured metallic films for environmental monitoring and optical sensing: experimental and computational studies.

Nanostructured silver films are studied using computational and experimental methods. Surface plasmon resonance-related phenomena are emphasized. Resonant optical absorption band changes due to the influence of noxious gases are investigated.

Positronics of subnanometer atomistic imperfections in solids as a high-informative structure characterization tool.

Methodological possibilities of positron annihilation lifetime (PAL) spectroscopy applied to characterize different types of nanomaterials treated within three-term fitting procedure are critically reconsidered. In contrast to conventional three-term analysis based on admixed positron- and positronium-trapping modes, the process of nanostructurization is considered as substitutional positron-positronium trapping within the same host matrix. Developed formalism allows estimate interfacial void volumes responsible for positron trapping and characteristic bulk positron lifetimes in nanoparticle-affected inhomogeneous media.

'Cold' crystallization in nanostructurized 80GeSe2-20Ga2Se3 glass.

'Cold' crystallization in 80GeSe2-20Ga2Se3 chalcogenide glass nanostructurized due to thermal annealing at 380°C for 10, 25, 50, 80, and 100 h are probed with X-ray diffraction, atomic force, and scanning electron microscopy, as well as positron annihilation spectroscopy performed in positron annihilation lifetime and Doppler broadening of annihilation line modes. It is shown that changes in defect-related component in the fit of experimental positron lifetime spectra for nanocrystallized glasses testify in favor of structural fragmentation of larger free-volume entities into smaller ones. Nanocrystallites of Ga2Se3 and/or GeGa4Se8 phases and prevalent GeSe2 phase extracted mainly at the surface of thermally treated samples with preceding nucleation and void agglomeration in the initial stage of annealing are characteristic features of cold crystallization.

Integrated thick-film nanostructures based on spinel ceramics.

Integrated temperature-humidity-sensitive thick-film structures based on spinel-type semiconducting ceramics of different chemical compositions and magnesium aluminate ceramics were prepared and studied. It is shown that temperature-sensitive thick-film structures possess good electrophysical characteristics in the region from 298 to 358 K. The change of electrical resistance in integrated thick-film structures is 1 order, but these elements are stable in time and can be successfully used for sensor applications.