Pressure-Induced Enhancement and Retainability of Optoelectronic Properties in Layered Zirconium Disulfide.

Transition metal dichalcogenides (TMDs) exhibit excellent electronic and photoelectric properties under pressure, prompting researchers to investigate their structural phase transitions, electrical transport, and photoelectric response upon compression. Herein, the structural and photoelectric properties of layered ZrS under pressure using in situ high-pressure photocurrent, Raman scattering spectroscopy, alternating current impedance spectroscopy, absorption spectroscopy, and theoretical calculations are studied. The experimental results show that the photocurrent of ZrS continuously increases with increasing pressure.

Ultrafast Dynamics Across Pressure-Induced Electronic State Transitions, Fluorescence Quenching, and Bandgap Evolution in CsPbBr Quantum Dots.

This work investigates the impact of pressure on the structural, optical properties, and electronic structure of CsPbBr quantum dots (QDs) using steady-state photoluminescence, steady-state absorption, and femtosecond transient absorption spectroscopy, reaching a maximum pressure of 3.38 GPa. The experimental results indicate that CsPbBr QDs undergo electronic state (ES) transitions from ES-I to ES-II and ES-II to ES-III at 0.

High-pressure magnetic properties and electrical transport behaviors of half-metallic ferromagnet CrO.

The magnetic properties and electrical transport behaviors of half-metallic ferromagnet chromium dioxide (CrO) powders under high pressure have been investigated by electrical resistivity, magneto-resistivity, and Hall-effect measurements. Our results reveal that the Hall coefficient, carrier concentration, and mobility all present discontinuous changes from 11.7 GPa to 14.

Transformation of Ammonium Azide at High Pressure and Temperature.

The compression of ammonium azide (AA) has been considered to be a promising route for producing high energy-density polynitrogen compounds. So far though, there is no experimental evidence that pure AA can be transformed into polynitrogen materials under high pressure at room temperature. We report here on high pressure () and temperature () experiments on AA embedded in N2 and on pure AA in the range 0-30 GPa, 300-700 K.

Metallization and Electrical Transport Behaviors of GaSb under High-Pressure.

The high-pressure metallization and electrical transport behaviors of GaSb were systematically investigated using in situ temperature-dependent electrical resistivity measurements, Hall effect measurements, transmission electron microscopy analysis, and first-principles calculations. The temperature-dependent resistivity measurements revealed pressure-induced metallization of GaSb at approximately 7.0 GPa, which corresponds to a structural phase transition from F-43m to Imma.

Anomalous Structural Transition and Electrical Transport Behaviors in Compressed Zn2SnO4: Effect of Interface.

The interface effect is one of the most important factors that strongly affect the structural transformations and the properties of nano-/submicro-crystals under pressure. However, characterization of the granular boundary changes in materials is always challenging. Here, using tetrakaidecahedral Zn2SnO4 microcrystals as an example, we employed alternating current impedance, X-ray diffraction methods and transmission electron microscopy to elucidate the effect of the interface on the structure and electrical transport behavior of the Zn2SnO4 material under pressure.