Publications by authors named "Hai-xu Liu"
[Temperature-Dependent Photoluminescence Property Studies of SiN(x) Films with nc-Si].
Guang Pu Xue Yu Guang Pu Fen Xi
March 2016
Article Synopsis
- Silicon nitride (SiN(x)) films with nanocrystalline silicon (nc-Si) were deposited using facing-target sputtering on a crystalline silicon substrate and subjected to thermal annealing.
- The study examined the photoluminescence (PL) properties of these films through spectroscopic measurements at varying temperatures, highlighting the influence of quantum confinement and material defects.
- Key findings showed that as excitation energy increased, PL peak positions shifted blue, and lower temperatures enhanced PL intensity and lifetime by reducing nonradiative recombination, indicating a strong temperature dependence on PL processes.
[The Influence of Oxygen Incorporation on the Microstructure and Band Gap Properties of the nc-Si Films].
Guang Pu Xue Yu Guang Pu Fen Xi
April 2015
The authors prepared nc-SiOx: H thin films using plasma enhanced chemical vapor deposition methods (PECVD) and investigated the influence of oxygen incorporation on the microstructure and band gap properties of the films. The results indicated that with the increase in oxygen mixing ratio (CO2/SiH4), the grain size of the nanocrystal-silicon grain as well as the crystallinity of the film reduced, and the surface tensile stress of the nanocrystal-silicon grain first increased and then decreased. Fourier infrared absorption spectra analysis indicated that, with the increase in oxygen mixing ratio, the intensity of the oxygen rich Si--O bond increased while that of the silicon rich Si--O bond decreased and the structure factor reduced in the meantime accompanied by the improved order degree of thin films.
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