Electronic stopping power for slow ions in the low-hardness semimetal HgTe using first-principles calculations.

The electronic stopping power for low-velocity ions (including protons, [Formula: see text]-particles, and [Formula: see text]) is investigated in a novel semimetal HgTe system, where the data are obtained with the aid of Ehrenfest dynamics combined with time-dependent density functional theory. For the light projectile ions (protons and [Formula: see text]-particles), the linear and nonlinear behaviors of electronic stopping power in three different channel directions are analyzed in detail. In the case where the projectile ion is a proton, the linear results for the threshold velocity are correlated with an indirect band gap; the direction of the electronic stopping power depends on the radial drag force, the channeling electronic density and the trapped charge.