In recent years, it was found that current passing through chiral molecules exhibits spin preference, an effect known as Chiral Induced Spin Selectivity (CISS). The effect also enables the reduction of scattering and therefore enhances delocalization. As a result, the delocalization of an exciton generated in the dots is not symmetric and relates to the electronic and hole excited spins.
View Article and Find Full Text PDFPhys Chem Chem Phys
December 2022
Partially charged chiral molecules act as spin filters, with preference for electron transport toward one type of spin ("up" or "down"), depending on their handedness. This effect is named the chiral induced spin selectivity (CISS) effect. A consequence of this phenomenon is spin polarization concomitant with electric polarization in chiral molecules.
View Article and Find Full Text PDFTransient, dissipative, aggregation and deaggregation of Au nanoparticles (NPs) or semiconductor quantum dots (QDs) leading to control over their transient optical properties are introduced. The systems consist of nucleic acid-modified pairs of Au NPs or pairs of CdSe/ZnS QDs, an auxiliary duplex L/T, and the nicking enzyme Nt.BbvCI as functional modules yielding transient aggregation/deaggregation of the NPs and dynamically controlling over their optical properties.
View Article and Find Full Text PDFLow cost short wavelength infrared (SWIR) photovoltaic (PV) detectors and solar cells are of very great interest, yet the main production technology today is based on costly epitaxial growth of InGaAs layers. In this study, layers of p-type, quantum confined (QC) PbS nano-domains (NDs) structure that were engineered to absorb SWIR light at 1550 nm (Eg = 0.8 eV) were fabricated from solution using the chemical bath deposition (CBD) technique.
View Article and Find Full Text PDFA liquid crystal optically addressed spatial light modulator based on an InGaAs photodiode array operating at low light levels is investigated in the short wavelength infrared (SWIR) spectral band to serve as a SWIR-to-visible imaging upconversion device. It consists of InGaAs/InP heterojunction photodetectors array sandwiched with a nematic LC layer. The photodiode array is composed of a 640×512 InGaAs/Inp heterojunctions, grown on InP substrate with a 15 μm pitch.
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