Frequency stabilization of a terahertz quantum-cascade laser to the Lamb dip of a molecular absorption line.

We demonstrate the frequency stabilization of a terahertz quantum-cascade laser (QCL) to the Lamb dip of the absorption line of a DO rotational transition at 3.3809309 THz. To assess the quality of the frequency stabilization, a Schottky diode harmonic mixer is used to generate a downconverted QCL signal by mixing the laser emission with a multiplied microwave reference signal.

Drastic Effect of Sequential Deposition Resulting from Flux Directionality on the Luminescence Efficiency of Nanowire Shells.

Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal position of the sources for the different constituents in the growth reactor, substrate rotation, and nanowire self-shadowing inevitably lead to sequential deposition. Here, we uncover for InGaAs/GaAs shell quantum wells grown by molecular beam epitaxy a drastic impact of this sequentiality on the luminescence efficiency.

Frequency and power stabilization of a terahertz quantum-cascade laser using near-infrared optical excitation.

We demonstrate a technique to simultaneously stabilize the frequency and output power of a terahertz quantum-cascade laser (QCL). This technique exploits frequency and power variations upon near-infrared illumination of the QCL with a diode laser. It does not require an external terahertz optical modulator.

Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy.

Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light-emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection, and improved light extraction. Here, we study the spontaneous emission of GaN/(Al,Ga)N nanowire ensembles grown on Si(111) by plasma-assisted molecular beam epitaxy. The nanowires contain single GaN quantum disks embedded in long (Al,Ga)N nanowire segments essential for efficient light extraction.

Wideband, high-resolution terahertz spectroscopy by light-induced frequency tuning of quantum-cascade lasers.

Near-infrared optical excitation enables wideband frequency tuning of terahertz quantum-cascade lasers. In this work, we demonstrate the feasibility of the approach for molecular laser absorption spectroscopy. We present a physical model which explains the observed frequency tuning characteristics by the optical excitation of an electron-hole plasma.

Coherence Resonance and Stochastic Resonance in an Excitable Semiconductor Superlattice.

Collective electron transport causes a weakly coupled semiconductor superlattice under dc voltage bias to be an excitable system with 2N+2 degrees of freedom: electron densities and fields at N superlattice periods plus the total current and the field at the injector. External noise of sufficient amplitude induces regular current self-oscillations (coherence resonance) in states that are stationary in the absence of noise. Numerical simulations show that these oscillations are due to the repeated nucleation and motion of charge dipole waves that form at the emitter when the current falls below a critical value.

Fast Detection of a Weak Signal by a Stochastic Resonance Induced by a Coherence Resonance in an Excitable GaAs/Al_{0.45}Ga_{0.55}As Superlattice.

The effect of a coherence resonance is observed experimentally in a GaAs/Al_{0.45}Ga_{0.55}As superlattice under dc bias at room temperature, which is driven by noise.

Electrical and optical properties of epitaxial binary and ternary GeTe-SbTe alloys.

Phase change materials such as pseudobinary GeTe-SbTe (GST) alloys are an essential part of existing and emerging technologies. Here, we investigate the electrical and optical properties of epitaxial phase change materials: α-GeTe, GeSbTe5 (GST225), and SbTe. Temperature-dependent Hall measurements reveal a reduction of the hole concentration with increasing temperature in SbTe that is attributed to lattice expansion, resulting in a non-linear increase of the resistivity that is also observed in GST225.

Doppler-free spectroscopy with a terahertz quantum-cascade laser.

We report on the Doppler-free saturation spectroscopy of a molecular transition at 3.3 THz based on a quantum-cascade laser and an absorption cell in a collinear pump-probe configuration. A Lamb dip with a sub-Doppler linewidth of 170 kHz is observed for a rotational transition of HDO.

Crystal-Phase Quantum Wires: One-Dimensional Heterostructures with Atomically Flat Interfaces.

In semiconductor quantum-wire heterostructures, interface roughness leads to exciton localization and to a radiative decay rate much smaller than that expected for structures with flat interfaces. Here, we uncover the electronic and optical properties of the one-dimensional extended defects that form at the intersection between stacking faults and inversion domain boundaries in GaN nanowires. We show that they act as crystal-phase quantum wires, a novel one-dimensional quantum system with atomically flat interfaces.

Real-time gas sensing based on optical feedback in a terahertz quantum-cascade laser.

We report on real-time gas sensing with a terahertz quantum-cascade laser (QCL). The method is solely based on the modulation of the external cavity length, exploiting the intermediate optical feedback regime. While the QCL is operated in continuous-wave mode, optical feedback results in a change of the QCL frequency as well as its terminal voltage.

Terahertz quantum-cascade lasers as high-power and wideband, gapless sources for spectroscopy.

Terahertz (THz) quantum-cascade lasers (QCLs) are powerful radiation sources for high-resolution and high-sensitivity spectroscopy with a discrete spectrum between 2 and 5 THz as well as a continuous coverage of several GHz. However, for many applications, a radiation source with a continuous coverage of a substantially larger frequency range is required. We employed a multi-mode THz QCL operated with a fast ramped injection current, which leads to a collective tuning of equally-spaced Fabry-Pérot laser modes exceeding their separation.

Noise-enhanced chaos in a weakly coupled GaAs/(Al,Ga)As superlattice.

Noise-enhanced chaos in a doped, weakly coupled GaAs/Al_{0.45}Ga_{0.55}As superlattice has been observed at room temperature in experiments as well as in the results of the simulation of nonlinear transport based on a discrete tunneling model.

Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: impact of C adsorption on the exciton lifetime.

Electron irradiation of GaN nanowires in a scanning electron microscope strongly reduces their luminous efficiency as shown by cathodoluminescence imaging and spectroscopy. We demonstrate that this luminescence quenching originates from a combination of charge trapping at already existing surface states and the formation of new surface states induced by the adsorption of C on the nanowire sidewalls. The interplay of these effects leads to a complex temporal evolution of the quenching, which strongly depends on the incident electron dose per area.

High-spectral-resolution terahertz imaging with a quantum-cascade laser.

We report on a high-spectral-resolution terahertz imaging system operating with a multi-mode quantum-cascade laser (QCL), a fast scanning mirror, and a sensitive Ge:Ga detector. By tuning the frequency of the QCL, several spectra can be recorded in 1.5 s during the scan through a gas cell filled with methanol (CHOH).

Radial Stark Effect in (In,Ga)N Nanowires.

We study the luminescence of unintentionally doped and Si-doped InxGa1-xN nanowires with a low In content (x < 0.2) grown by molecular beam epitaxy on Si substrates. The emission band observed at 300 K from the unintentionally doped samples is centered at much lower energies (800 meV) than expected from the In content measured by X-ray diffractometry and energy dispersive X-ray spectroscopy.

Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature.

The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which gives rises to much stronger enhancement, has proven to be more difficult to achieve because of the rapid nonradiative surface/interface recombination in hybrid dielectric-semiconductor structures.

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film.

Vertical GaN nanowires are grown in a self-induced way on a sputtered Ti film by plasma-assisted molecular beam epitaxy. Both in situ electron diffraction and ex situ ellipsometry show that Ti is converted to TiN upon exposure of the surface to the N plasma. In addition, the ellipsometric data demonstrate this TiN film to be metallic.

Evidence for frequency comb emission from a Fabry-Pérot terahertz quantum-cascade laser.

We report on a broad-band terahertz quantum-cascade laser (QCL) with a long Fabry-Pérot ridge cavity, for which the tuning range of the individual laser modes exceeds the mode spacing. While a spectral range of approximately 60 GHz (2 cm(-1)) is continuously covered by current and temperature tuning, the total emission range spans more than 270 GHz (9 cm(-1)). Within certain operating ranges, we found evidence for stable frequency comb operation of the QCL.

High-temperature, continuous-wave operation of terahertz quantum-cascade lasers with metal-metal waveguides and third-order distributed feedback.

Currently, different competing waveguide and resonator concepts exist for terahertz quantum-cascade lasers (THz QCLs). We examine the continuous-wave (cw) performance of THz QCLs with single-plasmon (SP) and metal-metal (MM) waveguides fabricated from the same wafer. While SP QCLs are superior in terms of output power, the maximum operating temperature for MM QCLs is typically much higher.

Frequency modulation spectroscopy with a THz quantum-cascade laser.

We report on a terahertz spectrometer for high-resolution molecular spectroscopy based on a quantum-cascade laser. High-frequency modulation (up to 50 MHz) of the laser driving current produces a simultaneous modulation of the frequency and amplitude of the laser output. The modulation generates sidebands, which are symmetrically positioned with respect to the laser carrier frequency.

Noise-induced current switching in semiconductor superlattices: observation of nonexponential kinetics in a high-dimensional system.

We report on measurements of first-passage-time distributions associated with current switching in weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium and high dimensional. Static current-voltage (I-V) characteristics exhibit multiple current branches and bistability; precision, high-bandwidth current switching data are collected in response to steps in the applied voltage to final voltages V1 near the end of a current branch. For a range of V1 values, the measured switching times vary stochastically.

Lateral distributed-feedback gratings for single-mode, high-power terahertz quantum-cascade lasers.

We report on terahertz quantum-cascade lasers (THz QCLs) based on first-order lateral distributed-feedback (lDFB) gratings, which exhibit continuous-wave operation, high output powers (>8 mW), and single-mode emission at 3.3-3.4 THz.

Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications.

The incorporation of Au during vapor-liquid-solid nanowire growth might inherently limit the performance of nanowire-based devices. Here, we assess the material quality of Au-assisted and Au-free grown GaAs/(Al,Ga)As core-shell nanowires using photoluminescence spectroscopy. We show that at room temperature, the internal quantum efficiency is systematically much lower for the Au-assisted nanowires than for the Au-free ones.