Controlling the Interlayer Dzyaloshinskii-Moriya Interaction by Electrical Currents.

The recently discovered interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) in multilayers with perpendicular magnetic anisotropy favors canting of spins in the in-plane direction. It could thus stabilize intriguing spin textures such as Hopfions. A key requirement for nucleation is to control the IL-DMI.

Chiral Spin Spirals at the Surface of the van der Waals Ferromagnet FeGeTe.

Topologically protected magnetic structures provide a robust platform for low power consumption devices for computation and data storage. Examples of these structures are skyrmions, chiral domain walls, and spin spirals. Here, we use scanning electron microscopy with polarization analysis to unveil the presence of chiral counterclockwise Néel spin spirals at the surface of a bulk van der Waals ferromagnet FeGeTe (FGT) at zero magnetic field.

Spontaneous creation and annihilation dynamics and strain-limited stability of magnetic skyrmions.

Magnetic skyrmions are topological magnetic spin structures exhibiting particle-like behaviour. They are of strong interest from a fundamental viewpoint and for application, where they have potential to act as information carriers in future low-power computing technologies. Importantly, skyrmions have high physical stability because of topological protection.

Magnetic Chirality Controlled by the Interlayer Exchange Interaction.

Chiral magnetism, wherein there is a preferred sense of rotation of the magnetization, determines the chiral nature of magnetic textures such as skyrmions, domain walls, or spin spirals. Current research focuses on identifying and controlling the interactions that define the magnetic chirality in thin film multilayers. The influence of the interfacial Dzyaloshinskii-Moriya interaction (IDMI) and, recently, the dipolar interactions have been reported.

Tuning Magnetic Chirality by Dipolar Interactions.

The stabilization of chiral magnetic domain walls and skyrmions has been attributed to the actively investigated Dzyaloshinskii-Moriya interaction. Recently, however, predictions were made that suggest dipolar interactions can also stabilize chiral domain walls and skyrmions, but direct experimental evidence has been lacking. Here we show that dipolar interactions can indeed stabilize chiral domain walls by directly imaging the magnetic domain walls using scanning electron microscopy with polarization analysis in archetype Pt/CoB/Ir thin film multilayers.

Author Correction: Long-range chiral exchange interaction in synthetic antiferromagnets.

In the version of this Article originally published, the sentence 'D.-S.H.

Long-range chiral exchange interaction in synthetic antiferromagnets.

The exchange interaction governs static and dynamic magnetism. This fundamental interaction comes in two flavours-symmetric and antisymmetric. The symmetric interaction leads to ferro- and antiferromagnetism, and the antisymmetric interaction has attracted significant interest owing to its major role in promoting topologically non-trivial spin textures that promise fast, energy-efficient devices.

Asymmetric Hysteresis for Probing Dzyaloshinskii-Moriya Interaction.

The interfacial Dzyaloshinskii-Moriya interaction (DMI) is intimately related to the prospect of superior domain-wall dynamics and the formation of magnetic skyrmions. Although some experimental efforts have been recently proposed to quantify these interactions and the underlying physics, it is still far from trivial to address the interfacial DMI. Inspired by the reported tilt of the magnetization of the side edge of a thin film structure, we here present a quasi-static, straightforward measurement tool.

Field-free magnetization reversal by spin-Hall effect and exchange bias.

As the first magnetic random access memories are finding their way onto the market, an important issue remains to be solved: the current density required to write magnetic bits becomes prohibitively high as bit dimensions are reduced. Recently, spin-orbit torques and the spin-Hall effect in particular have attracted significant interest, as they enable magnetization reversal without high current densities running through the tunnel barrier. For perpendicularly magnetized layers, however, the technological implementation of the spin-Hall effect is hampered by the necessity of an in-plane magnetic field for deterministic switching.

Cleaved thin-film probes for scanning tunneling microscopy.

We introduce an alternative type of probe for scanning tunneling microscopy (STM). Instead of using a needle-like tip made from a piece of metallic wire, a sharp-edged cleaved insulating substrate, which is initially covered by a thin conductive film, is used. The sharp tip is formed at the intersection of the two cleaved sides.

Thickness dependence of the interfacial Dzyaloshinskii-Moriya interaction in inversion symmetry broken systems.

In magnetic multilayer systems, a large spin-orbit coupling at the interface between heavy metals and ferromagnets can lead to intriguing phenomena such as the perpendicular magnetic anisotropy, the spin Hall effect, the Rashba effect, and especially the interfacial Dzyaloshinskii-Moriya (IDM) interaction. This interfacial nature of the IDM interaction has been recently revisited because of its scientific and technological potential. Here we demonstrate an experimental technique to straightforwardly observe the IDM interaction, namely Brillouin light scattering.

Tunable chiral spin texture in magnetic domain-walls.

Magnetic domain-walls (DWs) with a preferred chirality exhibit very efficient current-driven motion. Since structural inversion asymmetry (SIA) is required for their stability, the observation of chiral domain walls in highly symmetric Pt/Co/Pt is intriguing. Here, we tune the layer asymmetry in this system and observe, by current-assisted DW depinning experiments, a small chiral field which sensitively changes.

Synchronous precessional motion of multiple domain walls in a ferromagnetic nanowire by perpendicular field pulses.

Magnetic storage and logic devices based on magnetic domain wall motion rely on the precise and synchronous displacement of multiple domain walls. The conventional approach using magnetic fields does not allow for the synchronous motion of multiple domains. As an alternative method, synchronous current-induced domain wall motion was studied, but the required high-current densities prevent widespread use in devices.

Domain wall depinning governed by the spin Hall effect.

Perpendicularly magnetized materials have attracted significant interest owing to their high anisotropy, which gives rise to extremely narrow, nanosized domain walls. As a result, the recently studied current-induced domain wall motion (CIDWM) in these materials promises to enable a new class of data, memory and logic devices. Here we propose the spin Hall effect as an alternative mechanism for CIDWM.

Shift registers based on magnetic domain wall ratchets with perpendicular anisotropy.

The movement of magnetic domain walls can be used to build a device known as a shift register, which has applications in memory and logic circuits. However, the application of magnetic domain wall shift registers has been hindered by geometrical restrictions, by randomness in domain wall displacement and by the need for high current densities or rotating magnetic fields. Here, we propose a new approach in which the energy landscape experienced by the domain walls is engineered to favour a unidirectional ratchet-like propagation.

Electric-field control of domain wall motion in perpendicularly magnetized materials.

Domain wall motion in materials exhibiting perpendicular magnetic anisotropy has been the subject of intensive research because of its large potential for future spintronic devices. Recently, it has been shown that perpendicular anisotropy of thin films can be influenced by electric fields. Voltage-controlled magnetic switching has already been realized, which is envisioned to lead to low-power logic and memory devices.

Tunable resistivity of individual magnetic domain walls.

Despite the relevance of current-induced magnetic domain wall (DW) motion for new spintronics applications, the exact details of the current-domain wall interaction are not yet understood. A property intimately related to this interaction is the intrinsic DW resistivity. Here, we investigate experimentally how the resistivity inside a DW depends on the wall width Δ, which is tuned using focused ion beam irradiation of Pt/Co/Pt strips.

Domain-wall pinning by local control of anisotropy in Pt/Co/Pt strips.

We theoretically and experimentally analyze the pinning of a magnetic domain wall (DW) at engineered anisotropy variations in Pt/Co/Pt strips with perpendicular magnetic anisotropy. An analytical model is derived showing that a step in the anisotropy acts as an energy barrier for the DW. Quantitative measurements are performed showing that the anisotropy can be controlled by focused ion beam irradiation with Ga ions.

Determination of the spin torque non-adiabaticity in perpendicularly magnetized nanowires.

Novel nanofabrication methods and the discovery of an efficient manipulation of local magnetization based on spin polarized currents has generated a tremendous interest in the field of spintronics. The search for materials allowing for fast domain wall dynamics requires fundamental research into the effects involved (Oersted fields, adiabatic and non-adiabatic spin torque, Joule heating) and possibilities for a quantitative comparison. Theoretical descriptions reveal a material and geometry dependence of the non-adiabaticity factor β, which governs the domain wall velocity.

Internal electron diffraction from atomically ordered subsurface nanostructures in metals.

We demonstrate that a part of interface at a subsurface nanocavity in Cu(110) can efficiently induce electron scattering back to the surface even if it is inclined with respect to the surface, if the condition for electron diffraction is fulfilled. This backscattering induces oscillations of electron local density of states at the surface versus electron energy. In agreement with our model calculations, the diffraction is assigned to a specific atomic structure at the interface, and is found to be significantly enhanced by focussing of electron waves for propagation along the [110] direction.

Fe:O:C grown by focused-electron-beam-induced deposition: magnetic and electric properties.

We systematically study the effect of oxygen content on the magneto-transport and microstructure of Fe:O:C nanowires deposited by focused-electron-beam-induced (FEBID) deposition. The Fe/O ratio can be varied with an Fe content varying between ∼ 50 and 80 at.% with overall low C content (≈16 ± 3 at.

Magnetoresistance in hybrid organic spin valves at the onset of multiple-step tunneling.

By combining experiments with simple model calculations, we obtain new insight in spin transport through hybrid, CoFeB/Al2O3(1.5 nm)/tris(8-hydroxyquinoline)aluminium (Alq3)/Co spin valves. We have measured the characteristic changes in the I-V behavior as well as the intrinsic loss of magnetoresistance at the onset of multiple-step tunneling.

Long-range electron interferences at a metal surface induced by buried nanocavities.

Apparent c(2x2) superstructures within the narrow beams of an interference pattern spreading in the 100 directions at the surface of Cu(001) are observed by scanning tunneling microscopy. These features are induced by electron scattering from Ar- and Ne-filled subsurface nanocavities. The beams originate from electron anisotropy resulting in focusing of bulk electrons.

Correlation between magnetism and spin-dependent transport in CoFeB alloys.

We report a correlation between the spin polarization of the tunneling electrons and the magnetic moment of amorphous CoFeB alloys. Such a correlation is surprising since the spin polarization of the tunneling electrons involves s-like electrons close to the Fermi level (E_{F}), while the magnetic moment mainly arises due to all the d electrons below E_{F}. We show that probing the s and d bands individually provides clear and crucial evidence for such a correlation to exist through s-d hybridization, and demonstrate the tunability of the electronic and magnetic properties of CoFeB alloys.

Nonadiabatic spin transfer torque in high anisotropy magnetic nanowires with narrow domain walls.

Current induced domain wall (DW) depinning of a narrow DW in out-of-plane magnetized (Pt/Co)_{3}/Pt multilayer elements is studied by magnetotransport. We find that for conventional measurements Joule heating effects conceal the real spin torque efficiency and so we use a measurement scheme at a constant sample temperature to unambiguously extract the spin torque contribution. From the variation of the depinning magnetic field with the current pulse amplitude we directly deduce the large nonadiabaticity factor in this material and we find that its amplitude is consistent with a momentum transfer mechanism.