Graphite/h-BN van der Waals heterostructure as a gate stack for HgTe quantum wells.

Two-dimensional topological insulators have attracted much interest due to their potential applications in spintronics and quantum computing. To access the exotic physical phenomena, a gate electric field is required to tune the Fermi level into the bulk band gap. Hexagonal boron nitride (h-BN) is a promising alternative gate dielectric due to its unique advantages such as flat and charge-free surface.

Fluctuations in Planar Magnetotransport Due to Tilted Dirac Cones in Topological Materials.

Fluctuations in planar magnetotransport are ubiquitous in topological HgTe structures, in both tensile (topological insulator) and compressively strained layers (Weyl semimetal phase). We show that the common reason for the fluctuations is the presence of tilted Dirac cones combined with the formation of charge puddles. The origin of the tilted Dirac cones is the mix of the Zeeman term due to the in-plane magnetic field and quadratic contributions to the dispersion relation.

Realization of smooth side profile using diffusion-controlled wet chemical etching for HgTe/(Hg,Cd)Te heterostructures.

We utilize a diffusion-controlled wet chemical etching technique to fabricate microstructures from two-dimensional HgTe/(Hg,Cd)Te-based topological insulators. For this purpose, we employ a KI: I: HBr: HO-based etchant. Investigation of the side profile of the etched heterostructure reveals that HgTe quantum wells protrude from the layer stack as a result of the different etch rates of the layers.

Low-Temperature Atomic Layer Deposition of Hafnium Oxide for Gating Applications.

We present a novel low-temperature (30 C) atomic layer deposition process for hafnium oxide and apply the layers as gate dielectric to fabricate devices out of the thermally sensitive topological insulator HgTe. The key to achieving self-limiting growth at these low temperatures is the incorporation of sufficiently long purge times ( ≥150 s) in the deposition cycles. We investigate the structural and compositional properties of these thin films using X-ray reflectometry and photoelectron spectroscopy, finding a growth rate of 1.