Publications by authors named "H Vazquez-Leal"

The aim of this article is to show a way to extend the usefulness of the Generalized Bernoulli Method (GBM) with the purpose to apply it for the case of variational problems with functionals that depend explicitly of all the variables. Moreover, after expressing the Euler equations in terms of this extension of GBM, we will see that the resulting equations acquire a symmetric form, which is not shared by the known Euler equations. We will see that this symmetry is useful because it allows us to recall these equations with ease.

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Nonlinear piezoelectric materials are raised as a great replacement for devices that require low power consumption, high sensitivity, and accurate transduction, fitting with the demanding requirements of new technologies such as the Fifth-Generation of telecommunications (5G), the Internet of Things (IoT), and modern radio frequency (RF) applications. In this work, the state equations that correctly predict the nonlinear piezoelectric phenomena observed experimentally are presented. Furthermore, we developed a fast methodology to implement the state equations in the main FEM simulation software, allowing an easy design and characterization of this type of device, as the symmetry structures for high-order tensors are shown and explained.

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Natural sources of green energy include sunshine, water, biomass, geothermal heat, and wind. These energies are alternate forms of electrical energy that do not rely on fossil fuels. Green energy is environmentally benign, as it avoids the generation of greenhouse gases and pollutants.

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Achieving the smart motion of any autonomous or semi-autonomous robot requires an efficient algorithm to determine a feasible collision-free path. In this paper, a novel collision-free path homotopy-based path-planning algorithm applied to planar robotic arms is presented. The algorithm utilizes homotopy continuation methods (HCMs) to solve the non-linear algebraic equations system (NAES) that models the robot's workspace.

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Hydrogenated microcrystalline silicon (µc-Si:H) and epitaxial silicon (epi-Si) films have been produced from SiF, H and Ar mixtures by plasma enhanced chemical vapor deposition (PECVD) at 200 °C. Here, both films were produced using identical deposition conditions, to determine if the conditions for producing µc-Si with the largest crystalline fraction (X), will also result in epi-Si films that encompass the best quality and largest crystalline silicon (c-Si) fraction. Both characteristics are of importance for the development of thin film transistors (TFTs), thin film solar cells and novel 3D devices since epi-Si films can be grown or etched in a selective manner.

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