Tuning Interlayer Exciton Emission with TMD Alloys in van der Waals Heterobilayers of MoWSe and Its Binary Counterparts.

Semiconductor heterostructures have been the backbone of developments in electronic and optoelectronic devices. One class of structures of interest is the so-called type II band alignment, in which optically excited electrons and holes relax into different material layers. The unique properties observed in two-dimensional transition metal dichalcogenides and the possibility to engineer van der Waals heterostructures make them candidates for future high-tech devices.

Enhanced excitonic features in an anisotropic ReS/WSe heterostructure.

Two-dimensional (2D) semiconductors have opened new horizons for future optoelectronic applications through efficient light-matter and many-body interactions at quantum level. Anisotropic 2D materials like rhenium disulphide (ReS) present a new class of materials with polarized excitonic resonances. Here, we demonstrate a WSe/ReS heterostructure which exhibits a significant photoluminescence quenching at room temperature as well as at low temperatures.

Local increase of the Curie temperature in Mn/Fe implanted YFeO (YIG).

The change in the Curie temperature of single crystalline garnet YFeO (YIG) sample due to lattice damage induced by ion implantation has been investigated in Fe emission Mössbauer Spectroscopy (eMS) following implantation of Mn (T = 1.5 min). The Mössbauer spectra analysis reveal high spin Fe ions substituted on both the octahedral and the tetrahedral sites.

Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films.

The underlying mechanism driving the structural amorphous-to-crystalline transition in Group VI chalcogenides is still a matter of debate even in the simplest GeTe system. We exploit the extreme sensitivity of Fe emission Mössbauer spectroscopy, following dilute implantation of Mn (T½ = 1.5 min) at ISOLDE/CERN, to study the electronic charge distribution in the immediate vicinity of the Fe probe substituting Ge (Fe), and to interrogate the local environment of Fe over the amorphous-crystalline phase transition in GeTe thin films.