Publications by authors named "H L Philipsen"

Molybdenum (Mo) has emerged as a promising material for advanced semiconductor devices, especially in the design and fabrication of interconnects requiring sub-10 nm metal nanostructures. However, current wet etching methods for Mo using aqueous solutions struggle to achieve smooth etching profiles at such scales. To address this problem, we explore wet chemical etching of patterned Mo nanowires (NWs) using an organic solution: ceric ammonium nitrate (CAN) dissolved in acetonitrile (ACN).

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The properties of a polymeric material are influenced by its underlying molecular distributions, including the molecular-weight (MWD), chemical-composition (CCD), and/or block-length (BLD) distributions. Gradient-elution liquid chromatography (LC) is commonly used to determine the CCD. Due to the limited solubility of polymers, samples are often dissolved in strong solvents.

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Article Synopsis
  • Synthetic polymers often have varying molecular weights and compositions, which can complicate analysis, but recycling gradient liquid chromatography (LC↻LC) helps clarify these distributions.
  • The study demonstrates that using steep gradients in LC↻LC reduces the effects of molecular weight distribution on chemical-composition distribution, allowing for more accurate measurements even without high-quality standards.
  • Results show that this method significantly improves the accuracy of copolymer elution predictions, particularly in lower-molecular-weight samples, reducing discrepancies between measured and expected compositions after applying the recycling technique.
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Wet etching offers an advantage as a soft, damage-less method to remove sacrificial material with close to nanometer precision which has become critical for the fabrication of nanoscale structures. In order to develop such wet etching solutions, screening of etchant properties like selectivity and (an)isotropy has become vital. Since these etchants typically have low etch rates, sensitive test structures are required to evaluate their etching behavior.

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