Large-Area Epitaxial Mott Insulating 1T-TaSe Monolayer on GaP(111)B.

Two-dimensional Mott materials have recently been reported in the dichalcogenide family with high potential for Mottronic applications. Nevertheless, their widespread use as a single or few layers is hampered by their limited device integration resulting from their growth on graphene, a metallic substrate. Here, we report on the fabrication of 1T-TaSe monolayers grown by molecular beam epitaxy on semiconducting gallium phosphide substrates.