Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO Resistive Random Access Memories to Address Device Variability.

Resistive random access memories (RRAM), based on the formation and rupture of conductive nanoscale filaments, have attracted increased attention for application in neuromorphic and in-memory computing. However, this technology is, in part, limited by its variability, which originates from the stochastic formation and extreme heating of its nanoscale filaments. In this study, we used scanning thermal microscopy (SThM) to assess the effect of filament-induced heat spreading on the surface of metal oxide RRAMs with different device designs.

Nanoscale temperature sensing of electronic devices with calibrated scanning thermal microscopy.

Heat dissipation threatens the performance and lifetime of many electronic devices. As the size of devices shrinks to the nanoscale, we require spatially and thermally resolved thermometry to observe their fine thermal features. Scanning thermal microscopy (SThM) has proven to be a versatile measurement tool for characterizing the temperature at the surface of devices with nanoscale resolution.

Quantum oscillations in an optically-illuminated two-dimensional electron system at the LaAlO/SrTiOinterface.

We have investigated the illumination effect on the magnetotransport properties of a two-dimensional electron system at the LaAlO/SrTiOinterface. The illumination significantly reduces the zero-field sheet resistance, eliminates the Kondo effect at low-temperature, and switches the negative magnetoresistance into the positive one. A large increase in the density of high-mobility carriers after illumination leads to quantum oscillations in the magnetoresistance originating from the Landau quantization.

Gate-tuned anomalous Hall effect driven by Rashba splitting in intermixed LaAlO/GdTiO/SrTiO.

The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behaviour of the two-dimensional electron system forming at the interface of SrTiO-based oxide heterostructures. The occurrence of AHE is often interpreted as a signature of ferromagnetism, but it is becoming more and more clear that also paramagnets may contribute to AHE. We studied the influence of magnetic ions by measuring intermixed LaAlO/GdTiO/SrTiO at temperatures below 10 K.