Publications by authors named "H G Svavarsson"
Article Synopsis
- Accurate and rapid breath monitoring plays a crucial role in healthcare, particularly for diagnosing conditions like sleep apnea and detecting early physiological disorders; however, existing devices are often uncomfortable and expensive.
- This paper discusses the development of a sensitive respiratory sensor using silicon nanowires (SiNWs) created through a cost-effective technique involving metal-assisted chemical etching, emphasizing the importance of reducing production costs by exploring aluminum (Al) electrodes as an alternative to gold (Au).
- The study compares the performance of SiNWs breath sensors with p-type and n-type silicon, observing that the choice of electrode material affects the sensor's response, ultimately highlighting the need for further research to understand the underlying mechanics of these interactions.
Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers using a silver catalyzed top-down etching process.
View Article and Find Full Text PDFFilms of SiGe nanocrystals (NCs) in oxide have the advantage of tuning the energy band gap by adjusting SiGe NCs composition and size. In this study, SiGe-SiO amorphous films were deposited by magnetron sputtering on Si substrate followed by rapid thermal annealing at 700, 800 and 1000 °C. We investigated films with Si:Ge:SiO compositions of 25:25:50 vol.
View Article and Find Full Text PDFMultilayer structures comprising of SiO/SiGe/SiO and containing SiGe nanoparticles were obtained by depositing SiO layers using reactive direct current magnetron sputtering (dcMS), whereas, Si and Ge were co-sputtered using dcMS and high-power impulse magnetron sputtering (HiPIMS). The as-grown structures subsequently underwent rapid thermal annealing (550-900 °C for 1 min) in N ambient atmosphere. The structures were investigated using X-ray diffraction, high-resolution transmission electron microscopy together with spectral photocurrent measurements, to explore structural changes and corresponding properties.
View Article and Find Full Text PDFSiGe nanoparticles dispersed in a dielectric matrix exhibit properties different from those of bulk and have shown great potential in devices for application in advanced optoelectronics. Annealing is a common fabrication step used to increase crystallinity and to form nanoparticles in such a system. A frequent downside of such annealing treatment is the formation of insulating SiO layer at the matrix/SiGe interface, degrading the optical properties of the structure.
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