The temperature induced current transport characteristics in the orthoferrite YbFeOthin film/p-type Si structure.

The perovskite ytterbium ferrite is a new ferroelectric semiconductor material. We presented the temperature induced current-voltage (-) characteristics of the Al/YbFeO/p-Si/Al hetero-junction. The orthoferrite YbFeOthin films were deposited on a single crystal p-type Si substrate by a radio frequency magnetron sputtering system.

The effect of silicon loss and fabrication tolerance on spectral properties of porous silicon Fabry-Perot cavities in sensing applications.

In this paper, we investigate the effect of non-uniformities (enlargement of current passage, non-equal surface current densities, etc.) in axial as well as transverse directions of a porous silicon Fabry-Perot (FP) cavity as well as loss nature of bulk silicon on spectral properties of this cavity, even that cavity is created with an anisotropic etching process. Without correct and comprehensive characterization of such cavities by incorporating these non-uniformities and inherent lossy nature of a cavity, detection and identification of biological and chemical molecules by that cavity may yield unpredictable and misleading results.

Aging of porous silicon and the origin of blue shift.

Aging effects of porous silicon (PS) and the origin of blue shift are investigated. Photoluminescence (PL) measurements of the PS prepared with HF-EtOH solution showed a 210 meV blue shift after 1.5 months.