Publications by authors named "H Aramberri"

Antiferroelectric oxides are promising materials for applications in high-density energy storage, solid-state cooling, and negative capacitance devices. However, the range of oxide antiferroelectrics available today is rather limited. In this work, it is demonstrated that antiferroelectric properties can be electrostatically engineered in artificially layered ferroelectric superlattices.

View Article and Find Full Text PDF

Nanostructured ferroelectrics display exotic multidomain configurations resulting from the electrostatic and elastic boundary conditions they are subject to. While the ferroelectric domains appear frozen in experimental images, atomistic second-principles studies suggest that they may become spontaneously mobile upon heating, with the polar order melting in a liquidlike fashion. Here, we run molecular dynamics simulations of model systems (PbTiO_{3}/SrTiO_{3} superlattices) to study the unique features of this transformation.

View Article and Find Full Text PDF

Recent works on electric bubbles (including the experimental demonstration of electric skyrmions) constitute a breakthrough akin to the discovery of magnetic skyrmions some 15 years ago. So far research has focused on obtaining and visualizing these objects, which often appear to be immobile (pinned) in experiments. Thus, critical aspects of magnetic skyrmions-e.

View Article and Find Full Text PDF

The wealth of complex polar topologies recently found in nanoscale ferroelectrics results from a delicate balance between the intrinsic tendency of the materials to develop a homogeneous polarization and the electric and mechanical boundary conditions imposed on them. Ferroelectric-dielectric interfaces are model systems in which polarization curling originates from open circuit-like electric boundary conditions, to avoid the build-up of polarization charges through the formation of flux-closure domains that evolve into vortex-like structures at the nanoscale level. Although ferroelectricity is known to couple strongly with strain (both homogeneous and inhomogeneous), the effect of mechanical constraints on thin-film nanoscale ferroelectrics has been comparatively less explored because of the relative paucity of strain patterns that can be implemented experimentally.

View Article and Find Full Text PDF

HfO-based thin films hold huge promise for integrated devices as they show full compatibility with semiconductor technologies and robust ferroelectric properties at nanometer scale. While their polarization switching behavior has been widely investigated, their electromechanical response received much less attention so far. Here, we demonstrate that piezoelectricity in HfZrO ferroelectric capacitors is not an invariable property but, in fact, can be intrinsically changed by electrical field cycling.

View Article and Find Full Text PDF