Widely tunable multimode-interference based coupled cavity laser with integrated interferometer.

We present a simple to process tunable laser, fabricated in a low-cost generic fabrication process and based on two coupled Fabry-Perot cavities. The complex coupling coefficients of the coupling element are analytically derived from a 3×3 MMI using coupled mode theory and chosen to maximize the SMSR during lasing operation. Additionally, one of the cavities contains a reflective interferometer, which acts as coarse wavelength selector.

Low-loss passive waveguides in a generic InP foundry process via local diffusion of zinc.

Generic InP foundry processes allow monolithic integration of active and passive elements into a common p-n doped layerstack. The passive loss can be greatly reduced by restricting the p-dopant to active regions. We report on a localized Zn-diffusion process based on MOVPE, which allows to reduce waveguide loss from 2 dB/cm to below 0.

Coupled cavity laser based on anti-resonant imaging via multimode interference.

We report the experimental demonstration of two coupled laser cavities via self-imaging interference in a multimode waveguide. The coupling is optimized by considering images formed by two coherent phase-delayed signals at the input of a 3×3 splitter. As a result, the complex transfer coefficients of the coupling element can be chosen to increase the mode selectivity of the coupled system.

High-efficiency ultrasmall polarization converter in InP membrane.

An ultrasmall (<10  μm length) polarization converter in InP membrane is fabricated and characterized. The device relies on the beating between the two eigenmodes of chemically etched triangular waveguides. Measurements show a very high polarization conversion efficiency of >99% with insertion losses of <-1.

Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers.

We report on a passively mode-locked InP/InGaAsP multiple quantum well semiconductor ring laser that operates at a 20 GHz repetition rate and around 1575 nm wavelength. The device has been realized using the active-passive integration technology in a standardized photonic integration platform. We demonstrate experimentally for the first time to our knowledge that the relative positioning of the amplifier and absorber in a monolithically integrated ring laser can be used to control the balance of power between counterpropagating fields in the mode-locked state.