Polarization Pruning: Reliability Enhancement of Hafnia-Based Ferroelectric Devices for Memory and Neuromorphic Computing.

Ferroelectric (FE) materials are key to advancing electronic devices owing to their non-volatile properties, rapid state-switching abilities, and low-energy consumption. FE-based devices are used in logic circuits, memory-storage devices, sensors, and in-memory computing. However, the primary challenge in advancing the practical applications of FE-based memory is its reliability.

On-Chip Annealing Using Embedded Micro-Heater for Highly Sensitive and Selective Gas Detection.

The demand for gas sensing systems that enable fast and precise gas recognition is growing rapidly. However, substantial challenges arise from the complex fabrication process of sensor arrays, time-consuming data transmission to an external processor, and high energy consumption in multi-stage data processing. In this study, a gas sensing system using on-chip annealing for fast and power-efficient gas detection is proposed.

Demonstration of In-Memory Biosignal Analysis: Novel High-Density and Low-Power 3D Flash Memory Array for Arrhythmia Detection.

Smart healthcare systems integrated with advanced deep neural networks enable real-time health monitoring, early disease detection, and personalized treatment. In this work, a novel 3D AND-type flash memory array with a rounded double channel for computing-in-memory (CIM) architecture to overcome the limitations of conventional smart healthcare systems: the necessity of high area and energy efficiency while maintaining high classification accuracy is proposed. The fabricated array, characterized by low-power operations and high scalability with double independent channels per floor, exhibits enhanced cell density and energy efficiency while effectively emulating the features of biological synapses.

Energy Efficient Artificial Olfactory System with Integrated Sensing and Computing Capabilities for Food Spoilage Detection.

Artificial olfactory systems (AOSs) that mimic biological olfactory systems are of great interest. However, most existing AOSs suffer from high energy consumption levels and latency issues due to data conversion and transmission. In this work, an energy- and area-efficient AOS based on near-sensor computing is proposed.

Reconfigurable Manipulation of Oxygen Content on Metal Oxide Surfaces and Applications to Gas Sensing.

Oxygen vacancies and adsorbed oxygen species on metal oxide surfaces play important roles in various fields. However, existing methods for manipulating surface oxygen require severe settings and are ineffective for repetitive manipulation. We present a method to manipulate the amount of surface oxygen by modifying the oxygen adsorption energy by electrically controlling the electron concentration of the metal oxide.

Transducer-Aware Hydroxy-Rich-Surface Indium Oxide Gas Sensor for Low-Power and High-Sensitivity NO Gas Sensing.

Low-power metal oxide (MOX)-based gas sensors are widely applied in edge devices. To reduce power consumption, nanostructured MOX-based sensors that detect gas at low temperatures have been reported. However, the fabrication process of these sensors is difficult for mass production, and these sensors are lack uniformity and reliability.

Recovery of off-state stress-induced damage in FET-type gas sensor using self-curing method.

The need for high-performance gas sensors is driven by concerns over indoor and outdoor air quality, and industrial gas leaks. Due to their structural diversity, vast surface area, and geometric tunability, metal oxides show significant potential for the development of gas sensing systems. Despite the fact that several previous reports have successfully acquired a suitable response to various types of target gases, it remains difficult to maintain the reliability of metal oxide-based gas sensors.

Synergistic improvement of sensing performance in ferroelectric transistor gas sensors using remnant polarization.

Gaseous pollutants, including nitrogen oxides, pose a severe threat to ecosystems and human health; therefore, developing reliable gas-sensing systems to detect them is becoming increasingly important. Among the various options, metal-oxide-based gas sensors have attracted attention due to their capability for real-time monitoring and large response. In particular, in the field of materials science, there has been extensive research into controlling the morphological properties of metal oxides.

Effect of charge storage engineering on the NO gas sensing properties of a WO FET-type gas sensor with a horizontal floating-gate.

In this paper, we investigate the effects of charge storage engineering (CSE) on the NO gas sensing properties such as response, recovery, and sensitivity of a FET-type gas sensor with a horizontal floating-gate (FG) having tungsten trioxide (WO) as a sensing layer. When the FET transducer is set at an erase state (ΔV = -2 V), the holes injected into the FG by Fowler-Nordheim (F-N) tunneling increase the electron concentration at the WO-passivation layer interface. Accordingly, an oxidizing gas, NO, can take more electrons from WO, which increases the change in the FG voltage (ΔV) by a factor of 2.

Gas sensing materials roadmap.

Gas sensor technology is widely utilized in various areas ranging from home security, environment and air pollution, to industrial production. It also hold great promise in non-invasive exhaled breath detection and an essential device in future internet of things. The past decade has witnessed giant advance in both fundamental research and industrial development of gas sensors, yet current efforts are being explored to achieve better selectivity, higher sensitivity and lower power consumption.

Proposition of deposition and bias conditions for optimal signal-to-noise-ratio in resistor- and FET-type gas sensors.

In the field of gas sensor studies, most researchers are focusing on improving the response of the sensors to detect a low concentration of gas. However, factors that make a large response, such as abundant or strong adsorption sites, also work as a source of noise, resulting in a trade-off between response and noise. Thus, the response alone cannot fully evaluate the performance of sensors, and the signal-to-noise-ratio (SNR) should additionally be considered to design gas sensors with optimal performance.

Humidity-Sensitive Field Effect Transistor with In₂O₃ Nanoparticles as a Sensing Layer.

In this work, we investigate the humidity-sensing performance on a humidity-sensitive p-channel field effect transistor (FET) having a floating-gate (FG) and a control-gate (CG) placing horizontally each other. A sensing layer is formed onto a part of the CG and the O/N/O stack over the FG by inkjet-printing process. The printed ink is composed of indium oxide (In₂O₃.

Observation of physisorption in a high-performance FET-type oxygen gas sensor operating at room temperature.

Oxygen (O2) sensors are needed for monitoring environment and human health. O2 sensing at low temperature is required, but studies are lacking. Here we report, for the first time, that the performance of a field effect transistor (FET)-type O2 sensor operating at 25 °C was improved greatly by a physisorption sensing mechanism.