Si quantum dots (QDs) have been fabricated from SiO/SiO multilayer structures to create a homogeneous size. However, this structure achieved much lower efficiencies than would be expected in the Si QD photovoltaic field. This is because Si QD generation and photoexcited carrier transport is restricted by the adjacent SiO layer.
View Article and Find Full Text PDFWe investigated the ultraviolet (UV) responses of a heterojunction Si quantum dot (QD) solar cell consisting of p-type Si-QDs fabricated on a n-type crystalline Si (p-Si-QD/n-c-Si HJSC). The UV responses were compared with a conventional n-type crystalline Si solar cell (n-c-Si SC). The external and internal quantum efficiency results of the p-Si-QD/n-c-Si HJSC exhibited a clear enhancement in the UV responses (300-400 nm), which was not observed in the n-c-Si SC.
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